CGH60030D
30 W, 6.0 GHz, GaN HEMT Die
Cree’s CGH60030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEM...
CGH60030D
30 W, 6.0 GHz, GaN HEMT Die
Cree’s CGH60030D is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs
transistors.
PN: CGH60030D
FEATURES
APPLICATIONS
15 dB Typical Small Signal Gain at 4 GHz 12 dB Typical Small Signal Gain at 6 GHz 30 W Typical PSAT 28 V Operation High Breakdown Voltage High Temperature Operation Up to 6 GHz Operation High Efficiency
2-Way Private Radio Broadband Amplifiers Cellular Infrastructure Test Instrumentation Class A, AB, Linear amplifiers suitable
for OFDM, W-CDMA, EDGE, CDMA waveforms
Packaging Information
Bare die are shipped in Gel-Pak® containers. Non-adhesive tacky membrane immobilizes die during
shipment.
Rev 3.1 – April 2012
Subject to change without notice. www.cree.com/wireless
1
Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter
Symbol
Rating
Drain-source Voltage
VDSS
84
Gate-source Voltage
VGS -10, +2
Storage Temperature
TSTG
-65, +150
Operating Junction Temperature
TJ 225
Maximum Forward Gate Current
IGMAX
7.0
Maximum Drain Current1
IDMAX
3.0
Thermal Resistance, Junction to Case (packaged)2 Thermal Resistance, Junction to Case (die only) Mounting Temperature (30 seconds)
...
