CGHV14500

CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar amplifier applications. The transistor could be utilized for band specific applications ranging from 800 through 1600 MHz. The package options are ceramic/metal flange and pill package. Package Type:P4N4:0C1G17H,V41440510303 Typical Performance Over 1.2-1.4 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 1.2 GHz 1.25 GHz 1.3 GHz 1.35 GHz Output Power 545 540 530 530 1.4 GHz 530 Gain 16.4 16.3 16.2 16.2 16.2 Drain Efficiency 69 69 68 66 65 Note: Measured in the CGHV14500-AMP amplifier circuit, under 500 μs pulse width, 10% duty cycle, PIN = 41 dBm. Units W dB % Features Reference design amplifier 1.2 - 1.4 GHz Operation FET tuning range UHF through 1800 MHz 530 W Typical Output Power 16 dB Power Gain 68% Typical Drain Efficiency <0.3 dB Pulsed Amplitude Droop Internally pre-matched on input, unmatched output Subject to change without notice. www.cree.com/rf 1 Rev 3.1 – July 2015 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature VDSS 125 VGS -10, +2 TSTG -65, +150 TJ 225 Maximum Forward Gate Current Maximum Dr...