CGHV1F025S

CGHV1F025S 25 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and Ku-Band amplifier applications. The datasheet specifications are based on a X-Band (8.9 - 9.6 GHz) amplifier. The CGHV1F025S operates on a 40 volt rail circuit while housed in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Under reduced power, the transistor can operate below 40V to as low as 20V VDD, maintaining high gain and efficiency. PackagPeN:TyCpGeH:V31xF40D25FSN Typical Performance 8.9 - 9.6 GHz (TC = 25˚C) , 40 V Parameter 8.9 GHz 9.2 GHz 9.4 GHz Output Power @ PIN = 37 dBm 24 29 27 Drain Efficiency @ PIN = 37 dBm 43.5 48.5 48 Gain @ PIN = 0 dBm 10.7 11.6 11.3 Note: Measured in the CGHV1F025S-TB1 application circuit. Pulsed 100 µs 10% duty. 9.6 GHz 25 46 11.1 Units W % dB 2015 Preliminary Rev 0.2 – March Features Up to 15 GHz Operation 25 W Typical Output Power 11 dB Gain at 9.4 GHz Application circuit for 8.9 - 9.6 GHz Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Notes Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Cas...