CGHV1J006D

CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage. PN: CGHV1J006D FEATURES 17 dB Typ. Small Signal Gain at 10 GHz 60% Typ. PAE at 10 GHz 6 W Typical Psat 40 V Operation Up to 18GHz Operation APPLICATIONS Satellite Communications PTP Communications Links Marine Radar Pleasure Craft Radar Port Vessel Traffic Services Broadband Amplifiers High Efficiency Amplifiers Packaging Information Bare die are shipped in Gel-Pak® containers or on tape. Non-adhesive tacky membrane immobilizes die during shipment. Rev 0. – August 2014 Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Drain-source Voltage VDSS 100 Gate-source Voltage VGS -10, +2 Storage Temperature TSTG -65, +150 Operating Junction Temperature TJ 225 Maximum Forward Gate Current IGMAX 1.2 Maximum Drain Current1 IDMAX 0.8 Thermal Resistance, Junction to Case (packaged)2 RθJC 17.5 Thermal Resistance, Junction to Case (die only)2 RθJC 13.2 Mounting Temperature TS 320 Note1 Current limit for long term reliable operation. Note2 E...