CGHV22100

CGHV22100 100 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22100 ideal for 1.8 - 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is input matched and supplied in a ceramic/ metal flange package. PNPa: CckGaHgVe2T2y1p0e0: F44a0n1d6C2GaHndV2424100106P1 Typical Performance Over 1.8 - 2.2 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 1.8 GHz 2.0 GHz 2.2 GHz Gain @ 44 dBm 18.7 20.7 22.0 ACLR @ 44 dBm -37.8 -37.1 -35.1 Drain Efficiency @ 44 dBm 35.4 31.7 30.6 Note: Measured in the CGHV22100-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. Units dB dBc % Features 1.8 - 2.2 GHz Operation 20 dB Gain -35 dBc ACLR at 25 W PAVE 31-35 % Efficiency at 25 W PAVE High Degree of DPD Correction Can be Applied Rev 2.0 – May 2015 Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature3 Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Screw Torque VDSS VGS TSTG TJ IGMAX IDMAX TS τ 125 -10, +2 -65, +150 225 16 6 245 80 Thermal Resistance, Junction to Case3 RθJ...