CGHV27060MP
60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications
Cree’s CGHV27060MP is a 60W galliu...
CGHV27060MP
60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications
Cree’s CGHV27060MP is a 60W gallium nitride (GaN) high electron mobility
transistor (HEMT) housed in a small plastic SMT package 4.4mm x 6.5mm. The
transistor is a broadband device with no internal input or output match which allows for the agility to apply to a wide range of frequencies from UHF thru 2.7GHz. The CGHV27060MP makes for an excellent
transistor for pulsed applications at UHF, L Band or low S Band (<2.7GHz). Additionally, the
transistor is well suited for LTE micro basestation amplifiers in the power class of 10 to 15W average power in high efficiency topologies such as Class A/B, F or Doherty amplifiers.
PN: CGHV27060MP
Typical Performance Over 2.5 - 2.7 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.5 GHz
2.6 GHz
2.7 GHz
Gain @ 41.5 dBm Avg POUT
18.4
18.2
17.6
ACLR @ 41.5 dBm Avg POUT
-33.2
-34.5
-35.8
Drain Efficiency @ 41.5 dBm Avg POUT
33
33
32
Note: Measured in the CGHV27060MP-TB amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF, VDD = 50 V, IDS = 125 mA.
Typical Performance Over 2.5 - 2.7 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.5 GHz
2.6 GHz
2.7 GHz
Gain
16.7
16.4
16.2
Output Power
94 87 83
Drain Efficiency
69 69 64
Note: Measured in the CGHV27060MP-TB amplifier circuit, under pulse width 100 μs, 10% duty cycle, PIN = 33 dBm.
Units dB dBc %
Units dB W %...