CGHV27100

CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27100 ideal for 2.5 - 2.7 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is input matched and supplied in a ceramic/ metal pill and flange packages. PNPa: CckGaHgVe2T7y1p0e0: F44a0n1d6C2GaHndV2474100106P1 Typical Performance Over 2.5 - 2.7 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 2.5 GHz 2.6 GHz 2.7 GHz Gain @ 44 dBm 18.1 18.0 17.9 ACLR @ 44 dBm -37.0 -37.0 -37.0 Drain Efficiency @ 44 dBm 34.0 33.5 32.0 Note: Measured in the CGHV27100-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF, VDD = 50 V, IDS = 500 mA. Units dB dBc % Features 2.5 - 2.7 GHz Operation 18.0 dB Gain -37 dBc ACLR at 25 W PAVE 33 % Efficiency at 25 W PAVE High Degree of DPD Correction Can be Applied Rev 1.0 – May 2015 Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Screw Torque VDSS VGS TSTG TJ IGMAX IDMAX TS τ Thermal Resistance, Junction to Case3 Thermal Res...