CGHV31500F

PRELIMINARY CGHV31500F 500 W, 2700 - 3100 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGHV31500F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV31500F ideal for 2.7 - 3.1 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package, type 440217. PN: Package TCyGpHeV: 43410520107F Typical Performance Over 2.7-3.1 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 2.7 GHz 2.9 GHz 3.1 GHz Output Power 665 705 645 Gain 13.2 13.5 13.1 Drain Efficiency 66 68 62 Note: Measured in the CGHV31500F-AMP application circuit, under 500 μs pulse width, 10% duty cycle, PIN = 45 dBm. Units W dB % Rev 1.0 - August 2015 - PRELIMINARY Features 2.7 - 3.1 GHz Operation 675 W Typical Output Power 13.3 dB Power Gain 66% Typical Drain Efficiency 50 Ohm Internally Matched <0.3 dB Pulsed Amplitude Droop Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Pulse Width PW 500 Duty Cycle DC 10 Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Screw Torque VDSS VGS TSTG TJ IGMAX IDMAX TS τ 125 -10, +2 -65, +150 225 80 24 245 40 Pulsed Thermal Resistance, Junction to Case RθJ...