Document
Elektronische Bauelemente
SMF101M~SMF107M
50V ~ 1000 V 1.0 Amp Surface Mount Fast Recovery Rectifier
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Low profile surface mounted application in order to optimize board space. Small plastic SMD package. High current capability. Fast switching for high efficiency. High surge current capability. Glass-passivated chip junction.
MECHANICAL DATA
Case: Molded plastic, SOD-123 / Mini SMA Epoxy: UL94-V0 rate flame retardant Polarity: Indicated by cathode band Mounting position: Any Weight: Approximated 0.027 gram
SOD-123M
A B F
D C
E
E
REF.
A B C
Millimeter Min. Max. 3.50 3.90
1.40 1.80 1.30 1.70
REF.
D E F
Millimeter Min. Max. 3.60 (MAX.)
0.80 (TYP.) 0.30 (TYP.)
MARKING
Part Number SMF101M SMF102M SMF103M SMF104M
Marking F4 F4 F4 F4
Part Number SMF105M SMF106M SMF107M
Marking F5 F6 F7
PACKAGE INFORMATION
Package
MPQ
SOD-123M
2.5K
Leader Size 7 inch
http://www.SeCoSGmbH.com/
09-Dec-2011 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 3
Elektronische Bauelemente
SMF101M~SMF107M
50V ~ 1000 V 1.0 Amp Surface Mount Fast Recovery Rectifier
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameters
Symbol SMF SMF 101M 102M
Part Number
SMF SMF SMF 103M 104M 105M
Maximum repetitive peak reverse voltage VRRM
50 100 200 400 600
Maximum RMS voltage
VRMS 35 70 140 280 420
Maximum Continuous reverse voltage
VR 50 100 200 400 600
Maximum Instantaneous Forward Voltage
Maximum average forward rectified
current @ TA=55°C
Peak Forward Surge Current, 8.3ms
single half sine-wave superimposed on
rated load (JEDEC method)
Maximum DC Reverse Current at Rated DC Blocking Voltage
TA=25°C TA=125°C
Diode Junction Capacitance 1
Maximum Reverse Recovery Time 2
VF IO
IFSM
IR CJ Trr
1.3 1
30
5 100 15 150 250
Thermal resistance Junction to ambient
RθJA
42
Operating & Storage Temperature
TJ, TSTG
NOTE: 1. 2.
Measured at 1.0MHz and applied reverse voltage of 4.0V D.C. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A.
-65~150, -65~175
SMF 106M 800
560
800
SMF 107M 1000
700
1000
Unit
V V V V A
A
µA
pF 500 nS
°C / W °C
http://www.SeCoSGmbH.com/
09-Dec-2011 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 3
Elektronische Bauelemente
SMF101M~SMF107M
50V ~ 1000 V 1.0 Amp Surface Mount Fast Recovery Rectifier
RATINGS AND CHARACTERISTIC CURVES
INSTANTANEOUS FORWARD CURRENT,(A)
FIG.1-TYPICAL FORWARD CHARACTERISTICS
50
10 3.0 1.0
0.1
TJ=25 C Pulse Width 300us
1% Duty Cycle
.01 .6
.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50Ω NONINDUCTIVE
10 Ω NONINDUCTIVE
(+)
25Vdc (approx.)
()
D.U.T.
1Ω NONINDUCTIVE
OSCILLISCOPE (NOTE 1)
()
PULSE GENERATOR
(NOTE 2)
(+)
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms.
+0.5A
0 -0.25A
trr
| | | | | | | |
-1.0A
1cm SET TIME BASE FOR
50 / 10ns / cm
JUNCTION CAPACITANCE,(pF)
AVERAGE FORWARD CURRENT,(A)
PEAK FORWAARD SURGE CURRENT,(A)
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
1.2 1.0 0.8 0.6
0.4
0.2 0 0
Single Phase Half Wave 60Hz Resistive Or Inductive Load
20 40
60 80 100 120 140 160 180 200
AMBIENT TEMPERATURE ( C)
FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
50
40
30
TJ=25 C
8.3ms Single Half
20 Sine Wave
JEDEC method
10
0
1
5 10
50 100
NUMBER OF CYCLES AT 60Hz
35 30 25 20 15 10
5 0
.01
FIG.5-TYPICAL JUNCTION CAPACITANCE
.05 .1
.5 1
5 10
REVERSE VOLTAGE,(V)
50 100
http://www.SeCoSGmbH.com/
09-Dec-2011 Rev. B
Any changes of specification will not be informed individually.
Page 3 of 3
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