N-Channel MosFET
Elektronische Bauelemente
SMG2300
6A, 20V,RDS(ON) 28m N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product ...
Description
Elektronische Bauelemente
SMG2300
6A, 20V,RDS(ON) 28m N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
Description
A L
* The SMG2300 provide the designer with best combination S of fast switching, low on-resistance and cost-effectiveness.
* The SMG2300 is universally used for all commercial-industrial surface mount applications.
3 Top View 21
B
D G
Features
* Low on-resistance * Capable of 2.5V gate drive * Small package outline
C
H Drain
Gate Source
J K
D
SC-59 Dim Min Max
A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2
Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol VDS VGS
ID @TA=25 ID @TA=70
IDM PD @TA=25
Tj, Tstg
Thermal Data
Parameter Thermal Resistance Junction-ambient3 Max.
Symbol Rthj-a
G
S
Ratings 20 ±8 6 4.8 20 1.25 0.01
-55 ~ +150
Value 100
Unit V V A A A W
W/
Unit /W
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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Elektronische Bauelemente
SMG2300
6A, 20V,RDS(ON) 28m N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditio...
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