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SMG2300

SeCoS

N-Channel MosFET

Elektronische Bauelemente SMG2300 6A, 20V,RDS(ON) 28m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product ...


SeCoS

SMG2300

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Description
Elektronische Bauelemente SMG2300 6A, 20V,RDS(ON) 28m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Description A L * The SMG2300 provide the designer with best combination S of fast switching, low on-resistance and cost-effectiveness. * The SMG2300 is universally used for all commercial-industrial surface mount applications. 3 Top View 21 B D G Features * Low on-resistance * Capable of 2.5V gate drive * Small package outline C H Drain Gate Source J K D SC-59 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Symbol Rthj-a G S Ratings 20 ±8 6 4.8 20 1.25 0.01 -55 ~ +150 Value 100 Unit V V A A A W W/ Unit /W http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 4 Elektronische Bauelemente SMG2300 6A, 20V,RDS(ON) 28m N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics (Tj = 25 unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditio...




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