SMG2302

Elektronische Bauelemente SMG2302 3.2A, 20V,RDS(ON) 85m N-Channel Enhancement Mode Power Mos.FET Description RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free A L The SMG2302 provide the designer with the best Combination of fast switching, low on-resistance and cost-effectiveness. Features * Capable of 2.5V gate drive * Small package outline 3 S Top View 21 B D G C H Drain Gate Source J K D SC-59 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm Marking : 2302 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current, [email protected] Continuous Drain Current,3 [email protected] Pulsed Drain Current 1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range G Symbol VDS VGS ID@TA=25 oC ID@TA=70 oC IDM PD@TA=25 oC Tj, Tstg S Ratings 20 ±12 3.2 2.6 10 1.38 0.01 -55~+150 Unit V V A A A W W / oC oC Thermal Data Parameter Thermal Resistance Junction-ambient3 Symbol Rthj-a Ratings 90 Unit oC /W http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 4 Elektronische Bauelemente SMG2302 3.2A, 20V,RDS(ON) 85m N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25oC Unless otherwise specified) Parameter Symbol Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temp. Coefficient Gate Thre...