Document
Elektronische Bauelemente
SMG2302N
3.4 A, 20 V, RDS(ON) 76 m N-Channel Enhancement Mode MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper lead frame SC-59 saves board space.
Fast switching speed. High performance trench technology.
Application
DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
LeaderSize 7’ inch
SC-59
A
L
3
Top View
CB
12
KE
1
D F GH
3 2
J
REF.
A B C D E F
Millimeter
Min.
2.70 2.25 1.30
Max.
3.10 3.00 1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G H J K
L
Millimeter
Min. Max. 0.10 REF. 0.40 REF.
0.10 0.20 0.45 0.55
0.85 1.15
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1
Operating Junction and Storage Temperature Range
ID @ TA=25°C ID @ TA=70°C
PD @ TA=25°C PD @ TA=70°C
VGS ID IDM IS PD Tj, Tstg
Thermal Resistance Ratings
Maximum Junction to Ambient 1
Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature.
t ≦ 5 sec Steady State
RJA
Ratings
20 ±8 3.4 2.2 10 1.6 1.25 0.8 -55 ~ 150
100
166
Unit
V V A A A A W W °C
°C / W
http://www.SeCoSGmbH.com/
11-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4
Elektronische Bauelemente
SMG2302N
3.4 A, 20 V, RDS(ON) 76 m N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Gate-Threshold Voltage Gate-Body Leakage
VGS(th) 0.7 0.8 1.2
V VDS=VGS, ID=250μA
IGSS - - 100 nA VDS=0, VGS=8V
Zero Gate Voltage Drain Current On-State Drain Current 1
IDSS - - 1 μA VDS=16V, VGS=0
- - 10
VDS=20V, VGS= 0, TJ= 55°C
ID(on)
7
-
-
A VDS=5V, VGS=4.5V
Drain-Source On-Resistance 1 Forward Transconductance 1
RDS(ON) gfs
-
- 76 mΩ VGS=4.5V, ID=3.4A
- 103
VGS=2.5V, ID=2.9A
7 - S VDS=5V, ID=1.5A
Diode Forward Voltage
VSD - 0.7 -
Dynamic 2
V IS=1.6A, VGS=0
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time
Qg Qgs Qgd Ciss Coss Crss Td(on)
- 3.5 - 0.55 - 0.95 - 815 - 175 - 106 -5-
nC
VDS=10V, VGS=4.5V, ID=3.4A
VDS=15V, VGS=0, pF f=1MHz
Rise Time Turn-off Delay Time
Tr Td(off)
-
8 11
-
nS
VDD=10V, VGEN=4.5V, RL=6, RG=6
Fall Time
Tf - 3 -
Notes: 1 Pulse test:PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
11-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4
Elektronische Bauelemente
CHARACTERISTIC CURVE
SMG2302N
3.4 A, 20 V, RDS(ON) 76 m N-Channel Enhancement Mode MOSFET
http://www.SeCoSGmbH.com/
11-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 4
Elektronische Bauelemente
CHARACTERISTIC CURVE
SMG2302N
3.4 A, 20 V, RDS(ON) 76 m N-Channel Enhancement Mode MOSFET
http://www.SeCoSGmbH.com/
11-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
Page 4 of 4
.