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SMG2302N Dataheets PDF



Part Number SMG2302N
Manufacturers SeCoS
Logo SeCoS
Description N-Channel MOSFET
Datasheet SMG2302N DatasheetSMG2302N Datasheet (PDF)

Elektronische Bauelemente SMG2302N 3.4 A, 20 V, RDS(ON) 76 m N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper lead frame SC-59 saves boa.

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Elektronische Bauelemente SMG2302N 3.4 A, 20 V, RDS(ON) 76 m N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper lead frame SC-59 saves board space.  Fast switching speed.  High performance trench technology. Application DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PACKAGE INFORMATION Package MPQ SC-59 3K LeaderSize 7’ inch SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. 2.70 2.25 1.30 Max. 3.10 3.00 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15    ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 Operating Junction and Storage Temperature Range ID @ TA=25°C ID @ TA=70°C PD @ TA=25°C PD @ TA=70°C VGS ID IDM IS PD Tj, Tstg Thermal Resistance Ratings Maximum Junction to Ambient 1 Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. t ≦ 5 sec Steady State RJA Ratings 20 ±8 3.4 2.2 10 1.6 1.25 0.8 -55 ~ 150 100 166 Unit V V A A A A W W °C °C / W http://www.SeCoSGmbH.com/ 11-Feb-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 Elektronische Bauelemente SMG2302N 3.4 A, 20 V, RDS(ON) 76 m N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Gate-Threshold Voltage Gate-Body Leakage VGS(th) 0.7 0.8 1.2 V VDS=VGS, ID=250μA IGSS - - 100 nA VDS=0, VGS=8V Zero Gate Voltage Drain Current On-State Drain Current 1 IDSS - - 1 μA VDS=16V, VGS=0 - - 10 VDS=20V, VGS= 0, TJ= 55°C ID(on) 7 - - A VDS=5V, VGS=4.5V Drain-Source On-Resistance 1 Forward Transconductance 1 RDS(ON) gfs - - 76 mΩ VGS=4.5V, ID=3.4A - 103 VGS=2.5V, ID=2.9A 7 - S VDS=5V, ID=1.5A Diode Forward Voltage VSD - 0.7 - Dynamic 2 V IS=1.6A, VGS=0 Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Qg Qgs Qgd Ciss Coss Crss Td(on) - 3.5 - 0.55 - 0.95 - 815 - 175 - 106 -5- nC VDS=10V, VGS=4.5V, ID=3.4A VDS=15V, VGS=0, pF f=1MHz Rise Time Turn-off Delay Time Tr Td(off) - 8 11 - nS VDD=10V, VGEN=4.5V, RL=6, RG=6 Fall Time Tf - 3 - Notes: 1 Pulse test:PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 11-Feb-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 Elektronische Bauelemente CHARACTERISTIC CURVE SMG2302N 3.4 A, 20 V, RDS(ON) 76 m N-Channel Enhancement Mode MOSFET http://www.SeCoSGmbH.com/ 11-Feb-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 Elektronische Bauelemente CHARACTERISTIC CURVE SMG2302N 3.4 A, 20 V, RDS(ON) 76 m N-Channel Enhancement Mode MOSFET http://www.SeCoSGmbH.com/ 11-Feb-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 4 .


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