N-Channel MosFET
Elektronische Bauelemente
Description
The SMG2304A utilized advanced processing techniques to achieve the lowest possibl...
Description
Elektronische Bauelemente
Description
The SMG2304A utilized advanced processing techniques to achieve the lowest possible onresistance, extremely efficient and costeffectiveness device. The SMG2304A is universally used for all commercial-industrial applications.
Features
* Small Package Outline * Simple Drive Requirment
SMG2304A
2.5A, 30V,RDS(ON) 117m N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
A L
3
S Top View
21
B
D G
C
H Drain
Gate Source
J K
D
SC-59 Dim Min Max
A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm
Marking : 2304A
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,3 VGS@10V Continuous Drain Current,3 VGS@10V Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
G S
Symbol VDS VGS
ID@TA=25 oC ID@TA=70 oC
IDM PD@TA=25 oC
Tj, Tstg
Ratings
30 ±20 2.5 2.0 10 1.38 0.01 -55~+150
Unit V
V A A A W W / oC oC
Thermal Data
Parameter Thermal Resistance Junction-ambient 3
Max.
Symbol Rthj-a
Ratings 90
Unit
oC /W
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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Elektronische Bauelemente
SMG2304A
2.5A, 30V,RDS(ON) 117m N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25oC Unless otherwise specified)
Parameter
Symbol
Drain-Source Breakdown Vol...
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