Elektronische Bauelemente
SMG2306
5.3A, 20V,RDS(ON) 32m N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Produc...
Elektronische Bauelemente
SMG2306
5.3A, 20V,RDS(ON) 32m N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SMG2306 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applications
Features
* Capable of 2.5V gate drive * Lower on-resistance * Reliable and Rugged
Applications * Power Management in Notebook Computer * Protable Equipment * Battery Powered System
A L
3
S Top View
21
B
D G
C
H Drain
Gate Source
G
J K
D
SC-59 Dim Min Max
A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm
Marking : 2306
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage
3
Continuous Drain Current,
[email protected]
3
Continuous Drain Current,
[email protected] Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Symbol VDS VGS
ID@TA=25 oC ID@TA=70 oC
IDM PD@TA=25 oC
Tj, Tstg
S
Ratings 20 ±12 5.3 4.3 10 1.38 0.01
-55~+150
Unit V
V A A A W W / oC oC
Thermal Data
Parameter Thermal Resistance Junction-ambient3
Symbol Rthj-a
Ratings 90
Unit
oC /W
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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Elektronische Bauelemente
SMG2306
5.3A, 20V,RDS(ON) 32m N-Channel Enhancement Mode Pow...