SMG2306A

Elektronische Bauelemente SMG2306A 5 A, 30 V, RDS(ON) 35 mΩ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMG2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG2306A is universally used for all commercial-industrial applications. FEATURES z Capable of 2.5V gate drive z Lower on-resistance PACKAGE DIMENSIONS A L B Top View C F G H E D (Typ.) Drain Gate Source K J M REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° ABSOLUTE MAXIMUM RATINGS Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current3 ,[email protected] Drain Current3 ,[email protected] Pulsed Drain Current1, Power Dissipation Operating Junction and Storage Temperature Range VDS VGS ID @Ta=25℃ ID @Ta=70℃ IDM PD @Ta=25℃ Tj, Tstg Linear Derating Factor THERMAL DATA Parameter Thermal Resistance Junction-ambient3 Max. Symbol Rthj-a Ratings 30 ±12 5 4 20 1.38 -55 ~ +150 0.01 Value 90 Unit V V A A A W ℃ W/℃ Unit ℃/W 01-June-2005 Rev. B Page 1 of 4 Elektronische Bauelemente SMG2306A 5 A, 30 V, RDS(ON) 35 mΩ N-Channel Enhancement Mode Power Mos.FET ELECTRICAL CHARACTERISTICS Parameter Symbol Min. Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temperature Coefficient △BVDSS /△Tj...