SMG2310A

Elektronische Bauelemente SMG2310A N-Ch Enhancement Mode Power MOSFET 5.0 A, 60 V, RDS(ON)=115 mΩ sRoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTIONS The SMG2310A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG2310A is universally used for all commercial-industrial applications. FEATURES Simple Drive Requirement, Small Package Outline Super High Density Cell Design for Extremely Low RDS(ON) MARKING CODE 3 D N-Channel Drain 3 SC-59 A L 3 Top View CB 12 KE 3 1 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 2310A 12 GS 1 Gate 2 Source ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Operating Junction & Storage Temperature Range Thermal Resistance Junction-ambient3 Max SYMBOL VDS VGS ID @TA=25°C ID @TA=70°C IDM PD @TA=25°C TJ, TSTG THERMAL DATA RθJA RATINGS 60 ±20 5.0 4.0 10 1.38 0.01 -55 ~ +150 90 UNIT V V A A A W W/°C °C °C /W ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Le...