SMG2314

Elektronische Bauelemente SMG2314 3.5A, 20V,RDS(ON)75m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SMG2314 utilized advanced processing techniques to achieve the lowest possible on-resistance, extemely efficient and cost-effectiveness device. The SMG2314 is universally used for all commercial-industrial applications. S Features * Low On-Resistance * Capable Of 2.5V Gate Drive A L 3 Top View 21 B D G C Marking : 2314 D H Drain Gate Source K SC-59 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 J H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,3 [email protected] Continuous Drain Current,3 [email protected] Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID@TA=25 oC ID@TA=70 oC IDM PD@TA=25 oC Tj, Tstg Ratings 20 ±12 3.5 2.8 10 1.38 0.01 -55~+150 Unit V V A A A W W / oC oC Thermal Data Parameter Thermal Resistance Junction-ambient 3 http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Max. Symbol Rthj-a Ratings 90 Unit oC /W Any changing of specification will not be informed individual Page 1 of 4 Elektronische Bauelemente SMG2314 3.5A, 20V,RDS(ON)75m N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25oC Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Bre...