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SMG2314NE Dataheets PDF



Part Number SMG2314NE
Manufacturers SeCoS
Logo SeCoS
Description N-Channel MosFET
Datasheet SMG2314NE DatasheetSMG2314NE Datasheet (PDF)

Elektronische Bauelemente SMG2314NE 5.3 A, 20 V, RDS(ON) 32 m N-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as compu.

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Elektronische Bauelemente SMG2314NE 5.3 A, 20 V, RDS(ON) 32 m N-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Miniature SC-59 surface mount package saves board space.  High power and current handling capability.  MLow side high current DC-DC Converter applications SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. 2.70 2.25 1.30 1.00 Max. 3.10 3.00 1.70 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 PACKAGE INFORMATION Package MPQ SC-59 3K Leader Size 7’ inch ESD Protection Diode 2KV ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED) Parameter Symbol Ratings Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 TA=25°C TA=70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 TA=25°C TA=70°C Operating Junction and Storage Temperature Range VDS VGS ID IDM IS PD TJ, TSTG 20 ±12 5.3 4.1 20 1.8 1.3 0.8 -55 ~ 150 THERMAL RESISTANCE RATINGS Maximum Junction to Ambient 1 t ≦ 10 sec Steady State Notes 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. RJA 100 166 Unit V V A A A A W W °C °C / W http://www.SeCoSGmbH.com/ 26-Oct-2012 Rev. B Any changes of specification will not be informed individually. Page 1 of 4 Elektronische Bauelemente SMG2314NE 5.3 A, 20 V, RDS(ON) 32 m N-Channel Enhancement Mode Mos.FET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Gate-Threshold Voltage VGS(th) 0.4 - - V VDS=VGS, ID= 250uA Gate-Body Leakage IGSS - - ±10 nA VDS=0, VGS= ±12V Zero Gate Voltage Drain Current On-State Drain Current 1 IDSS - - 1 uA VDS=16V, VGS=0 - - 25 VDS=16V, VGS=0, TJ= 55°C ID(on) 10 - - A VDS =5V, VGS=4.5V Drain-Source On-Resistance 1 Forward Transconductance 1 RDS(ON) gfs - - 32 mΩ VGS=4.5V, ID=4.2A - 44 VGS=2.5V, ID=3.8A 11 - S VDS=15V, ID= 4.2A Diode Forward Voltage VSD - 0.7 - Dynamic 2 V IS=0.9A, VGS=0 Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss - 413 - VDS= 10V, Coss - 76 - pF VGS= 4.5V, Crss - 67 - f=1MHz. Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg - 6.2 - VDS= 10V, Qgs - 1 - nC VGS= 4.5V, Qgd - 2 - ID= 4.2A. Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) - 6 - VDS= 10V, Tr - 19 - VGEN= 4.5V, nS RGEN=6Ω, Td(off) - 47 - RL=2.4Ω, Tf - 67 - ID=4.2A. Notes 1 Pulse test:PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 26-Oct-2012 Rev. B Any changes of specification will not be informed individually. Page 2 of 4 Elektronische Bauelemente CHARACTERISTIC CURVE SMG2314NE 5.3 A, 20 V, RDS(ON) 32 m N-Channel Enhancement Mode Mos.FET http://www.SeCoSGmbH.com/ 26-Oct-2012 Rev. B Any changes of specification will not be informed individually. Page 3 of 4 Elektronische Bauelemente CHARACTERISTIC CURVE SMG2314NE 5.3 A, 20 V, RDS(ON) 32 m N-Channel Enhancement Mode Mos.FET http://www.SeCoSGmbH.com/ 26-Oct-2012 Rev. B Any changes of specification will not be informed individually. Page 4 of 4 .


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