Document
Elektronische Bauelemente
SMG2314NE
5.3 A, 20 V, RDS(ON) 32 m N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Miniature SC-59 surface mount package saves board space.
High power and current handling capability. MLow side high current DC-DC Converter applications
SC-59
A
L
3
Top View
CB
12
KE
1
D F GH
3 2
J
REF.
A B C D E F
Millimeter
Min.
2.70 2.25 1.30
1.00
Max.
3.10 3.00 1.70
1.40
1.70 2.30
0.35 0.50
REF.
G H J K L
Millimeter
Min. Max. 0.10 REF. 0.40 REF.
0.10 0.20 0.45 0.55
0.85 1.15
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
Leader Size 7’ inch
ESD Protection Diode
2KV
ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1
TA=25°C TA=70°C
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Power Dissipation 1
TA=25°C TA=70°C
Operating Junction and Storage Temperature Range
VDS VGS
ID
IDM IS
PD
TJ, TSTG
20 ±12 5.3 4.1 20 1.8 1.3 0.8 -55 ~ 150
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient 1
t ≦ 10 sec Steady State
Notes 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature.
RJA
100 166
Unit
V V A A A A W W °C
°C / W
http://www.SeCoSGmbH.com/
26-Oct-2012 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 4
Elektronische Bauelemente
SMG2314NE
5.3 A, 20 V, RDS(ON) 32 m N-Channel Enhancement Mode Mos.FET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Gate-Threshold Voltage
VGS(th)
0.4
-
-
V VDS=VGS, ID= 250uA
Gate-Body Leakage
IGSS - - ±10 nA VDS=0, VGS= ±12V
Zero Gate Voltage Drain Current On-State Drain Current 1
IDSS - - 1 uA VDS=16V, VGS=0
- - 25
VDS=16V, VGS=0, TJ= 55°C
ID(on) 10 - - A VDS =5V, VGS=4.5V
Drain-Source On-Resistance 1 Forward Transconductance 1
RDS(ON) gfs
-
- 32 mΩ VGS=4.5V, ID=4.2A
- 44
VGS=2.5V, ID=3.8A
11 -
S VDS=15V, ID= 4.2A
Diode Forward Voltage
VSD - 0.7 -
Dynamic 2
V IS=0.9A, VGS=0
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Ciss - 413 -
VDS= 10V,
Coss - 76 - pF VGS= 4.5V,
Crss - 67 -
f=1MHz.
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg - 6.2 -
VDS= 10V,
Qgs - 1 - nC VGS= 4.5V,
Qgd - 2 -
ID= 4.2A.
Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
Td(on) - 6 -
VDS= 10V,
Tr
- 19 -
VGEN= 4.5V,
nS RGEN=6Ω,
Td(off) - 47 -
RL=2.4Ω,
Tf - 67 -
ID=4.2A.
Notes 1 Pulse test:PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
26-Oct-2012 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4
Elektronische Bauelemente
CHARACTERISTIC CURVE
SMG2314NE
5.3 A, 20 V, RDS(ON) 32 m N-Channel Enhancement Mode Mos.FET
http://www.SeCoSGmbH.com/
26-Oct-2012 Rev. B
Any changes of specification will not be informed individually.
Page 3 of 4
Elektronische Bauelemente
CHARACTERISTIC CURVE
SMG2314NE
5.3 A, 20 V, RDS(ON) 32 m N-Channel Enhancement Mode Mos.FET
http://www.SeCoSGmbH.com/
26-Oct-2012 Rev. B
Any changes of specification will not be informed individually.
Page 4 of 4
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