P-Channel MosFET
Elektronische Bauelemente
SMG2329S
-1.2A , -100V , RDS(ON) 650 mΩ P-Channel Enhancement Mode MOSFET
RoHS Compliant Pro...
Description
Elektronische Bauelemente
SMG2329S
-1.2A , -100V , RDS(ON) 650 mΩ P-Channel Enhancement Mode MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SMG2329S provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The SMG5409 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
FEATURES
Simple Drive Requirement Small Package Outline
MARKING 2329S
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
Leader Size 7 inch
SC-59
A
L
3
Top View
CB
12
KE
1
D F GH
3 2
J
REF.
A B C D E F
Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40
1.70 2.30
0.35 0.50
REF.
G H J K L
Millimeter Min. Max.
0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55
0.85 1.15
TOP VIEW
1 3
2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current, VGS=10V 1
Pulsed Drain Current 2 Power Dissipation 3
TA=25°C TA=70°C
TA=25°C
ID
IDM PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Maximum Junction to Ambient 3 Maximum Junction to Case 1
RθJA RθJC
Ratings -100 ±20 -1.2 -1 -5 1
-55~150
125 80
Unit V V
A
A W °C
°C / W °C / W
http://www.SeCoSGmbH.com/
15-Jul-2013 Rev. A
Any changes of specification will not be informed individually.
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Elektronische Bauelemente
SMG2329S...
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