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SMG2329S

SeCoS

P-Channel MosFET

Elektronische Bauelemente SMG2329S -1.2A , -100V , RDS(ON) 650 mΩ P-Channel Enhancement Mode MOSFET RoHS Compliant Pro...


SeCoS

SMG2329S

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Description
Elektronische Bauelemente SMG2329S -1.2A , -100V , RDS(ON) 650 mΩ P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The SMG2329S provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The SMG5409 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. FEATURES Simple Drive Requirement Small Package Outline MARKING 2329S PACKAGE INFORMATION Package MPQ SC-59 3K Leader Size 7 inch SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 TOP VIEW 1 3 2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current, VGS=10V 1 Pulsed Drain Current 2 Power Dissipation 3 TA=25°C TA=70°C TA=25°C ID IDM PD Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance Rating Maximum Junction to Ambient 3 Maximum Junction to Case 1 RθJA RθJC Ratings -100 ±20 -1.2 -1 -5 1 -55~150 125 80 Unit V V A A W °C °C / W °C / W http://www.SeCoSGmbH.com/ 15-Jul-2013 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 Elektronische Bauelemente SMG2329S...




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