SMG2343

Elektronische Bauelemente SMG2343 -4.1A , -30V , RDS(ON) 45 mΩ P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The SMG2343 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications. FEATURES Lower Gate Threshold Voltage Small Package Outline MARKING 2343 PACKAGE INFORMATION Package MPQ SC-59 3K Leader Size 7 inch SC-59 A L 3 Top View CB 12 KE 3 1 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 1 3 2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Pulsed Drain Current 1 Power Dissipation Linear Derating Factor TA=25°C TA=70°C TA=25°C VDS VGS ID IDM PD Operating Junction and Storage Temperature Range Tj, Tstg Maximum Junction to Ambient 3 Thermal Resistance Rating RθJA Ratings -30 ±20 -4.1 -3.5 -12 1.38 0.01 -55~150 90 Unit V V A A W W / °C °C °C / W http://www.SeCoSGmbH.com/ 15-Aug-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 Elektronische Bauelemente SMG2343 -4.1A , -30V , RDS(ON) 45 mΩ P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Pa...