N-Channel MosFET
Elektronische Bauelemente
SMG2358N
3.1 A, 60 V, RDS(ON) 92 m N-Channel Enhancement Mode Mos.FET
RoHS Compliant Produc...
Description
Elektronische Bauelemente
SMG2358N
3.1 A, 60 V, RDS(ON) 92 m N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves
board space. Fast switching speed. High performance trench technology.
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
Leader Size 7 inch
SC-59
A
L
3
Top View
CB
12
KE
1
D F GH
3 2
J
REF.
A B C D E F
Millimeter
Min.
2.70 2.25 1.30
Max.
3.10 3.00 1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G H J K L
Millimeter
Min. Max. 0.10 REF. 0.40 REF.
0.10 0.20 0.45 0.55
0.85 1.15
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1
Operating Junction and Storage Temperature Range
TA= 25°C TA= 70°C
TA= 25°C TA= 70°C
VGS ID IDM IS PD TJ, TSTG
Thermal Resistance Ratings
Maximum Junction to Ambient 1
t≦10 sec Steady State
Notes 1 Surface Mo...
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