P-Channel MosFET
Elektronische Bauelemente
SMG2359P
-1.7A , -60V , RDS(ON) 381 m P-Channel Enhancement MOSFET
RoHS Compliant Product A...
Description
Elektronische Bauelemente
SMG2359P
-1.7A , -60V , RDS(ON) 381 m P-Channel Enhancement MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Fast Switch. Low Gate Charge. Miniature SC-59 Surface Mount Package Saves
Board Space.
APPLICATION
Voltage control small signal switch, power management in portable and battery-powered products such as computer portable electronics and other battery power application.
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
Leader Size 7’ inch
SC-59
A
L
3
Top View
CB
12
KE
1
D F GH
3 2
J
REF.
A B C D E F
Millimeter
Min. 2.70 2.25 1.30
Max. 3.10 3.00 1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G H J K L
Millimeter
Min. Max. 0.10 REF. 0.40 REF.
0.10 0.20 0.45 0.55
0.85 1.15
1 3
2
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1
TA=25°C TA=70°C
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Power Dissipation 1
TA=25°C TA=70°C
Operating Junction and Storage Temperature Range
VDS VGS
ID
IDM IS
PD
TJ, TSTG
Thermal Resistance Data
Maximum Junction to Ambient 1
t≦5 sec Steady-State
Notes: 1. Surface Mo...
Similar Datasheet