SMG2359P

Elektronische Bauelemente SMG2359P -1.7A , -60V , RDS(ON) 381 m P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Fast Switch.  Low Gate Charge.  Miniature SC-59 Surface Mount Package Saves Board Space. APPLICATION Voltage control small signal switch, power management in portable and battery-powered products such as computer portable electronics and other battery power application. PACKAGE INFORMATION Package MPQ SC-59 3K Leader Size 7’ inch SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. 2.70 2.25 1.30 Max. 3.10 3.00 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 1 3 2 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 TA=25°C TA=70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 TA=25°C TA=70°C Operating Junction and Storage Temperature Range VDS VGS ID IDM IS PD TJ, TSTG Thermal Resistance Data Maximum Junction to Ambient 1 t≦5 sec Steady-State Notes: 1. Surface Mo...