SMG2398NE

Elektronische Bauelemente SMG2398NE 2.2 A, 60 V, RDS(ON) 194 m N-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Low gate charge  Fast switching  Miniature SC-59 surface mount package saves board space. SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J PRODUCT SUMMARY SMG2398NE VDS(V) 60 RDS(on) (m 194@VGS= 10V 273@VGS= 4.5V ID(A) 2.2 1.8 REF. A B C D E F Millimeter Min. 2.70 2.25 1.30 Max. 3.10 3.00 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 PACKAGE INFORMATION Package MPQ SC-59 3K LeaderSize 7’ inch ESD Protection Diode 2KV ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 Operating Junction and Storage Temperature Range ID @ TA=25°C ID @ TA=70°C PD @ TA=25°C PD @ TA=70°C Symbol VDS VGS ID IDM IS PD Tj, Tstg Ratin...