MD516 NAND Flash Memory
Intel® MD516 NAND Flash Memory
JS29F16G08AAMC1, JS29F32G08CAMC1, JS29F64G08FAMC1
Product Features
Advance Datasheet
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Description
Intel® MD516 NAND Flash Memory
JS29F16G08AAMC1, JS29F32G08CAMC1, JS29F64G08FAMC1
Product Features
Advance Datasheet
Open NAND Flash Interface (ONFI) 1.0 Compliant
Multilevel cell (MLC) technology Organization:
— Page size: 4,314 bytes (4,096 + 218 bytes) — Block size: 128 pages (512K + 27K bytes) — Plane size: 2,048 blocks — Device size: 16Gb: 4,096 blocks; 32Gb:
8,192 blocks; 64Gb: 16,384 blocks Read performance
— Random read: 50µs — Sequential read: 20ns Write performance — Page program: 900µs (TYP) — Block erase: 2ms (TYP) Endurance: — 5,000 PROGRAM/ERASE cycles — Data Retention: JEDEC compliant Operating Temperature — Commercial: 0 to +70 °C — Extended: -40 to +85 °C Core Voltage (VCC): 2.7V - 3.6V
First block (block address 00h) guaranteed to be valid when shipped from factory
Industry-standard basic NAND Flash command set
Advanced command set:
— PROGRAM PAGE CACHE MODE
— PAGE READ CACHE MODE
— One-time programmable (OTP) commands
— Two-plane commands
— Interleaved die operations
— READ UNIQUE ID (contact factory)
— READ ID2 (contact factory)
Operation status byte provides a software method of detecting:
— Operation completion
— Pass/fail condition
— Write-protect status
Ready/busy# (R/B#) signal provides a hardware method of detecting PROGRAM or ERASE cycle completion
WP# signal: Entire device hardware write protect
Staggered Power-up Sequence: Issue RESET command (FFH)
INTERNAL DATA MOVE operations supported within the plane from whi...
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