Darlington
2SB1570
(70Ω) E B Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401...
Darlington
2SB1570
(70Ω) E B Equivalent circuit C
Silicon
PNP Epitaxial Planar
Transistor (Complement to type 2SD2401) Application : Audio, Series
Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics
(Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg
2SB1570 –160 –150 –5 –12 –1
150(Tc=25°C) 150
–55 to +150
Unit V V V A A W °C °C
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB
Conditions VCB=–160V
VEB=–5V IC=–30mA VCE=–4V, IC=–7A IC=–7A, IB=–7mA IC=–7A, IB=–7mA VCE=–12V, IE=2A VCB=–10V, f=1MHz
2SB1570 –100max –100max –150min 5000min∗ –2.5max –3.0max
50typ 230typ
Unit µA µA V
V V MHz pF
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
IB2
ton tstg
tf
(V)
(Ω) (A)
(V)
(V)
(mA)
(mA)
(µs)
(µs) (µs)
–70 10 –7 –10 5 –7 7 0.8typ 3.0typ 1.2typ
External Dimensions MT-200
2-ø3.2±0.1
36.4±0.3 24.4±0.2
6.0±0.2
2.1 9
7
21.4±0.3
20.0min 4.0max
a b
2
3
1.05
+0.2 -0.1
0.65
+0.2 -0.1
5.45±0.1
5.45±0.1
3.0
+0.3 -0.1
BCE
Weight : Approx 18.4g a. Type No. b. Lot No.
DC Current Gain hFE
Collector Current IC(A)
I C– V CE Characteristics (Typical)
–12 –10mA
–10
–8
–6
–4
–2.0mA –2.0mA
–1.5mA –1.2mA –1.0mA –0.8mA –0.6mA
IB=–0.4mA
–2
0 0 –2 –4 –6 Collector-Emitter Voltage VCE(V)
Collector-Emitter Saturation Voltage VCE(sat)(V)
V CE( s a t ) – I B Characteristics (Typical)
–3
–2
–10A
–7A IC=–5A –1
0 –0.2 –0.5...
