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1N4749A

Taiwan Semiconductor

Glass Passivated Junction Silicon Zener Diodes

1N4740A - 1M200Z Taiwan Semiconductor 1W, 10V - 200V Glass Passivated Junction Silicon Zener Diode FEATURES ● Glass pa...


Taiwan Semiconductor

1N4749A

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1N4740A - 1M200Z Taiwan Semiconductor 1W, 10V - 200V Glass Passivated Junction Silicon Zener Diode FEATURES ● Glass passivated chip junction ● Low profile package ● Built-in strain relief ● Low inductance ● Typical IR less than 5μA above 11V ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● Lighting application ● On-board DC/DC converter KEY PARAMETERS PARAMETER VALUE UNIT VZ 10 - 200 V Test current IZT 1.2 - 25 mA Ptot 1 W TJ MAX 150 °C Package DO-204AL (DO-41) Configuration Single Die MECHANICAL DATA ● Case: DO-204AL (DO-41) ● Molding compound meets UL 94 V-0 flammability rating ● Part no. with suffix "H" means AEC-Q101 qualified ● Packing code with suffix "G" means green compound (halogen-free) ● Terminal: Pure tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Weight: 0.3g (approximately) DO-204AL (DO-41) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL VALUE Power dissipation at TA=50°C Derate above 50°C (Note 1) 1.00 Ptot 6.67 Operating junction temperature range TJ -55 to +150 Storage temperature range Note: 1. Mounted on Cu-Pad size 5mm x 5mm TSTG -55 to +150 UNIT Watts mW/°C °C °C 1 Version:N1706 1N4740A - 1M200Z Taiwan Semiconductor ORDERING INFORMATION PART NO. PARTNO. PACKING SUFFIX CODE PACKING CODE SUFFIX 1N47xxA 1MxxxZ (Note 1) H ...




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