Glass Passivated Junction Silicon Zener Diodes
1N4740A – 1M200Z
Taiwan Semiconductor
1W, 10V - 200V Zener Diode
FEATURES
● AEC-Q101 qualified available ● Glass passi...
Description
1N4740A – 1M200Z
Taiwan Semiconductor
1W, 10V - 200V Zener Diode
FEATURES
● AEC-Q101 qualified available ● Glass passivated chip junction ● Low profile package ● Built-in strain relief ● Low inductance ● Typical IR less than 5μA above 11V ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● For general purpose regulation and protection applications
KEY PARAMETERS
PARAMETER VALUE UNIT
VZ
10 - 200
V
Test current IZT
1.2 - 25
mA
Ptot
1
W
TJ MAX
150
°C
Package
DO-204AL (DO-41)
Configuration
Single die
MECHANICAL DATA
● Case: DO-204AL (DO-41) ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Pure tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.300g (approximately)
DO-204AL (DO-41)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power dissipation at TA = 50°C Derate above 50°C(1)
1 Ptot
6.67
Operating junction temperature range
TJ
-55 to +150
Storage temperature range Note: 1. Mounted on Cu-Pad size 5mm x 5mm
TSTG
-55 to +150
UNIT W
mW/°C °C °C
1
Version: O2104
1N4740A – 1M200Z
Taiwan Semiconductor
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Device(1)
Zener voltage VZ @ IZT
Test current
Zener Impedance
IZT
ZZT@IZT
ZZK@IZK
Leakage current
IR@VR
Surge curren
t IR
V
mA
Ω
Ω
mA
μA
V
mA
Min Nom(2)(3) Max
Max
1N4740A 9.50
10
10.50
25.0
7
...
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