T..RIA Series
Vishay High Power Products
Medium Power Phase Control Thyristors (Power Modules), 50 A/70 A/90 A
FEATURES
• Electrically isolated base plate
• Types up to 1200 VRRM • 3500 VRMS isolating voltage • Simplified mechanical designs, rapid assembly
RoHS
COMPLIANT
• High surge capability
• Large creepage distances
• UL E78996 approved
• RoHS compliant
D-55 • Designed and qualified for industrial level
PRODUCT SUMMARY
IT(AV)
50 A/70 A/90 A
DESCRIPTION
These series of T-modules are intended for general purpose applications such as battery chargers, welders and plating equipment, regulated power supplies and temperature and speed control circuits. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
T50RIA
IT(AV) IT(RMS)
70 °C
50 80
ITSM
50 Hz 60 Hz
1310 1370
50 Hz I2t
60 Hz
8550 7800
I2√t 85 500
VRRM
Range
TJ
ELECTRICAL SPECIFICATIONS
T70RIA 70 110
1660 1740 13 860 12 650 138 500 100 to 1200 - 40 to 125
T90RIA 90 141
1780 1870 15 900 14 500 159 100
UNITS A A
A
A2s
A2√s V °C
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE CODE
T50RIA T70RIA T90RIA
10 20 40 60 80 100 120
VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE AND PEAK OFF-STATE VOLTAGE V
100 200 400 600 800 1000 1200
VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V
IRRM/IDRM MAXIMUM AT TJ = 25 °C µA
150 300 500 700 900 1100 1300
100
Document Number: 93756 Revision: 03-Jun-08
For technical questions, contact:
[email protected]
www.vishay.com 1
T..RIA Series
Vishay High Power Products Medium Power Phase Control Thyristors
(Power Modules), 50 A/70 A/90 A
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
T50RIA T70RIA T90RIA UNITS
Maximum average on-state current
at case temperature
IT(AV)
180° conduction, half sine wave
50 70 90 A 70 70 70 °C
Maximum RMS on-state current Maximum peak, one-cycle on-state, non-repetitive surge current
Maximum I2t for fusing
IT(RMS) ITSM
I2t
t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms
No voltage reapplied
100 % VRRM reapplied
No voltage reapplied
100 % VRRM reapplied
Sine half wave, initial TJ = TJ maximum
80 1310 1370 1100 1150 8550 7800 6050 5520
110 141 1660 1780 1740 1870 1400 1500 1460 1570 13 860 15 900 12 650 14 500 9800 11 250 8950 10 270
A A
A2s
Maximum I2√t for fusing
I2√t t = 0.1 to 10 ms, no voltage reapplied
85 500 138 500 159 100 A2√s
Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance
Maximum on-state voltage drop
Maximum forward voltage drop
Maximum holding current
Maximum latching current
VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ maximum
VT(TO)2 (I > π x IT(AV)), TJ maximum
rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ maximum
rt2 (I > π x IT(AV)), TJ maximum
VTM
ITM = π x IT(AV), TJ = 25 °C, tp = 400 µs square Average power = VT(TO) x IT(AV) + rf x (IT(RMS))2
VFM
ITM = π x IT(AV), TJ = 25 °C, tp = 400 µs square Average power = VT(TO) x IT(AV) + rf x (IT(RMS))2
IH Anode supply = 6 V, initial IT = 30 A, TJ = 25 °C
Anode supply = 6 V, resistive load = 10 Ω IL Gate pulse: 10 V, 100 µs, TJ = 25 °C
0.97 0.77 0.78 1.13 0.88 0.88
V
4.1 3.6 2.9 mΩ
3.3 3.2 2.6
1.60 1.55 1.55
V
1.60 1.55 1.55
V
200 200 200
mA 400 400 400
SWITCHING
PARAMETER Typical turn-on time Typical reverse recovery time Typical turn-off time
SYMBOL tgd trr tq
TEST CONDITIONS
TJ = 25 °C, Vd = 50 % VDRM, ITM = 50 A Ig = 500 mA, tr ≤ 0.5, tp ≥ 6 µs
TJ = 125 °C, ITM = 50 A, tp = 300 µs, dI/dt = 10 A/µs
TJ = TJ maximum, ITM = 50 A, tp = 300 µs -dI/dt = 15 A/µs, VR = 100 V, linear to 80 % VDRM
VALUES 0.9 3 110
UNITS µs
www.vishay.com 2
For technical questions, contact:
[email protected]
Document Number: 93756 Revision: 03-Jun-08
T..RIA Series
Medium Power Phase Control Thyristors Vishay High Power Products
(Power Modules), 50 A/70 A/90 A
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum peak reverse and off-state leakage current
RMS isolation voltage
Critical rate of rise of off-state voltage
IRRM, IDRM VISOL
dV/dt
TJ = TJ maximum 50 Hz, circuit to base, all terminals shorted, TJ = 25 °C, t = 1 s TJ = TJ maximum, linear to 80 % rated VDRM (1)
Note (1) Available with dV/dt = 1000 V/µs, to complete code add S90 i.e. T90RIA80S90
VALUES 15
3500 500
UNITS mA V V/µs
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
Maximum average gate power
PGM PG(AV)
Maximum peak gate current
Maximum peak negative gate voltage
IGM -VGT
Maximum required DC gate voltage to trigger
VGT
Maximum required DC gate current to trigger
Maximum gate voltage that will not trigger Maximum gate current that will not trigger
IGT
VGD IGD
Maximum rate of rise of turned-on current
dI/dt
TEST CONDITIONS TJ = TJ maximum, tp ≤ 5 ms
TJ = TJ maximum, f = 50 Hz
T50RIA T70RIA T90RI.