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T70RIA120 Dataheets PDF



Part Number T70RIA120
Manufacturers Vishay
Logo Vishay
Description Medium Power Phase Control Thyristors
Datasheet T70RIA120 DatasheetT70RIA120 Datasheet (PDF)

T..RIA Series Vishay High Power Products Medium Power Phase Control Thyristors (Power Modules), 50 A/70 A/90 A FEATURES • Electrically isolated base plate • Types up to 1200 VRRM • 3500 VRMS isolating voltage • Simplified mechanical designs, rapid assembly RoHS COMPLIANT • High surge capability • Large creepage distances • UL E78996 approved • RoHS compliant D-55 • Designed and qualified for industrial level PRODUCT SUMMARY IT(AV) 50 A/70 A/90 A DESCRIPTION These series of T-modules.

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T..RIA Series Vishay High Power Products Medium Power Phase Control Thyristors (Power Modules), 50 A/70 A/90 A FEATURES • Electrically isolated base plate • Types up to 1200 VRRM • 3500 VRMS isolating voltage • Simplified mechanical designs, rapid assembly RoHS COMPLIANT • High surge capability • Large creepage distances • UL E78996 approved • RoHS compliant D-55 • Designed and qualified for industrial level PRODUCT SUMMARY IT(AV) 50 A/70 A/90 A DESCRIPTION These series of T-modules are intended for general purpose applications such as battery chargers, welders and plating equipment, regulated power supplies and temperature and speed control circuits. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS T50RIA IT(AV) IT(RMS) 70 °C 50 80 ITSM 50 Hz 60 Hz 1310 1370 50 Hz I2t 60 Hz 8550 7800 I2√t 85 500 VRRM Range TJ ELECTRICAL SPECIFICATIONS T70RIA 70 110 1660 1740 13 860 12 650 138 500 100 to 1200 - 40 to 125 T90RIA 90 141 1780 1870 15 900 14 500 159 100 UNITS A A A A2s A2√s V °C VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE T50RIA T70RIA T90RIA 10 20 40 60 80 100 120 VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE AND PEAK OFF-STATE VOLTAGE V 100 200 400 600 800 1000 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM/IDRM MAXIMUM AT TJ = 25 °C µA 150 300 500 700 900 1100 1300 100 Document Number: 93756 Revision: 03-Jun-08 For technical questions, contact: [email protected] www.vishay.com 1 T..RIA Series Vishay High Power Products Medium Power Phase Control Thyristors (Power Modules), 50 A/70 A/90 A ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS T50RIA T70RIA T90RIA UNITS Maximum average on-state current at case temperature IT(AV) 180° conduction, half sine wave 50 70 90 A 70 70 70 °C Maximum RMS on-state current Maximum peak, one-cycle on-state, non-repetitive surge current Maximum I2t for fusing IT(RMS) ITSM I2t t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied Sine half wave, initial TJ = TJ maximum 80 1310 1370 1100 1150 8550 7800 6050 5520 110 141 1660 1780 1740 1870 1400 1500 1460 1570 13 860 15 900 12 650 14 500 9800 11 250 8950 10 270 A A A2s Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 85 500 138 500 159 100 A2√s Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage drop Maximum forward voltage drop Maximum holding current Maximum latching current VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ maximum VT(TO)2 (I > π x IT(AV)), TJ maximum rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ maximum rt2 (I > π x IT(AV)), TJ maximum VTM ITM = π x IT(AV), TJ = 25 °C, tp = 400 µs square Average power = VT(TO) x IT(AV) + rf x (IT(RMS))2 VFM ITM = π x IT(AV), TJ = 25 °C, tp = 400 µs square Average power = VT(TO) x IT(AV) + rf x (IT(RMS))2 IH Anode supply = 6 V, initial IT = 30 A, TJ = 25 °C Anode supply = 6 V, resistive load = 10 Ω IL Gate pulse: 10 V, 100 µs, TJ = 25 °C 0.97 0.77 0.78 1.13 0.88 0.88 V 4.1 3.6 2.9 mΩ 3.3 3.2 2.6 1.60 1.55 1.55 V 1.60 1.55 1.55 V 200 200 200 mA 400 400 400 SWITCHING PARAMETER Typical turn-on time Typical reverse recovery time Typical turn-off time SYMBOL tgd trr tq TEST CONDITIONS TJ = 25 °C, Vd = 50 % VDRM, ITM = 50 A Ig = 500 mA, tr ≤ 0.5, tp ≥ 6 µs TJ = 125 °C, ITM = 50 A, tp = 300 µs, dI/dt = 10 A/µs TJ = TJ maximum, ITM = 50 A, tp = 300 µs -dI/dt = 15 A/µs, VR = 100 V, linear to 80 % VDRM VALUES 0.9 3 110 UNITS µs www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 93756 Revision: 03-Jun-08 T..RIA Series Medium Power Phase Control Thyristors Vishay High Power Products (Power Modules), 50 A/70 A/90 A BLOCKING PARAMETER SYMBOL TEST CONDITIONS Maximum peak reverse and off-state leakage current RMS isolation voltage Critical rate of rise of off-state voltage IRRM, IDRM VISOL dV/dt TJ = TJ maximum 50 Hz, circuit to base, all terminals shorted, TJ = 25 °C, t = 1 s TJ = TJ maximum, linear to 80 % rated VDRM (1) Note (1) Available with dV/dt = 1000 V/µs, to complete code add S90 i.e. T90RIA80S90 VALUES 15 3500 500 UNITS mA V V/µs TRIGGERING PARAMETER SYMBOL Maximum peak gate power Maximum average gate power PGM PG(AV) Maximum peak gate current Maximum peak negative gate voltage IGM -VGT Maximum required DC gate voltage to trigger VGT Maximum required DC gate current to trigger Maximum gate voltage that will not trigger Maximum gate current that will not trigger IGT VGD IGD Maximum rate of rise of turned-on current dI/dt TEST CONDITIONS TJ = TJ maximum, tp ≤ 5 ms TJ = TJ maximum, f = 50 Hz T50RIA T70RIA T90RI.


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