Document
Bulletin I27105 rev. B 02/02
T..RIA SERIES
MEDIUM POWER PHASE CONTROL THYRISTORS
Features
Electrically isolated base plate Types up to 1200 VRRM 3500 VRMS isolating voltage Simplified mechanical designs, rapid assembly High surge capability Large creepage distances UL E78996 approved
Power Modules
50 A 70 A 90 A
Description
These series of T-modules are inteded for general purpose applications such as battery chargers, welders and plating equipment, regulated power supplies and temperature and speed control circuits. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built.
Major Ratings and Characteristics
Parameters T50RIA T70RIA T90RIA Units
IT(AV) @ TC
IT(RMS) ITSM @50Hz
@ 60Hz
50 70 80 1310 1370
70 70 110 1660 1740
90 70 141 1780 1870
A oC A A A
I2t @ 50Hz 8550
13860 15900 A2s
@60Hz 7800
12650 14500
I2√t 85500 138500 159100
VDRM/VRRM
100 to 1200
TJ -40 to 125
A2s A2√s
V oC
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T..RIA Series
Bulletin I27105 rev. B 02/02
ELECTRICAL SPECIFICATIONS Voltage Ratings
Type number
T50RIA T70RIA T90RIA
Voltage Code
10 20 40 60 80 100 120
VDRM/VRRM, maximum repetitive peak reverse voltage V 100
200
400
600
800
1000 1200
VRSM, maximum non-repetitive peak reverse voltage V 150
300
500
700
900
1100 1300
On-state Conduction
IDRM/IRRM max. @ 25°C µA
100
Parameter
T50RIA T70RIA T90RIA Units Conditions
IT(AV) Max. average on-state current @ Case temperature
IT(RMS) Max. RMS on-state current ITSM Maximum peak, one-cycle
on-state, non-repetitive surge current
I2t Maximum I2t for fusing
I2√t Maximum I2√t for fusing VT(TO)1 Low level value of threshold
voltage VT(TO)2 High level value of threshold
voltage rt1 Low level value on-state
slope resistance rt2 High level value on-state
slope resistance VTM Maximum on-state voltage drop
50 70 80 1310 1370 1100 1150 8550 7800 6050 5520 85500 0.97
1.13
4.1
3.3
1.60
IH Maximum holding current IL Maximum latching current
Switching
70 70 110 1660 1740 1400 1460 13860 12650 9800 8950 138500 0.77
0.88
3.6
3.2
90 70 141 1780 1870 1500 1570 15900 14500 11250 10270 159100 0.78
0.88
2.9
2.6
A 180° conduction, half sine wave
°C A
A t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM t = 8.3ms reapplied
Sine half wave,
A2s t = 10ms No voltage Initial TJ = TJ max. t = 8.3ms reapplied
A2√s V
t = 10ms 100% VRRM t = 8.3ms reapplied t = 0.1 to 10ms, no voltage reapplied (16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.
(I > π x IT(AV)), @ TJ max.
mΩ (16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.
(I > π x IT(AV)), @ TJ max.
1.55
200 400
1.55
V ITM = π x IT(AV), TJ = 25°C., tp = 400µs square Av. power = VT(TO) x IT(AV) + rf x (IT(RMS))2
mA Anode supply = 6V initial IT = 30A, TJ = 25°C mA Anode supply = 6V resistive load = 10Ω
gate pulse: 10V, 100µs, TJ = 25°C
Parameter
T50RIA T70RIA T90RIA Units Conditions
tgd Typical turn-on time
trr Typical reverse recovery time tq Typical turn-off time
0.9
3.0 1.