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BZW04-11 Dataheets PDF



Part Number BZW04-11
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Transient Voltage Suppressor
Datasheet BZW04-11 DatasheetBZW04-11 Datasheet (PDF)

CREAT BY ART Transient Voltage Suppressor FEATURES - Excellent clamping capability - Low impedance surge resistance - 400W surge capability at 10 / 1000 μs waveform - Very fast response time - Typical IR less than 1μA above 10V - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition BZW04 SERIES Taiwan Semiconductor MECHANICAL DATA Case: DO-204AL (DO-41) Molding compound, UL flammability classification rating 94V-0 Bas.

  BZW04-11   BZW04-11


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CREAT BY ART Transient Voltage Suppressor FEATURES - Excellent clamping capability - Low impedance surge resistance - 400W surge capability at 10 / 1000 μs waveform - Very fast response time - Typical IR less than 1μA above 10V - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition BZW04 SERIES Taiwan Semiconductor MECHANICAL DATA Case: DO-204AL (DO-41) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, Weight: 0.3g (approximately) DO-204AL (DO-41) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) PARAMETER Peak power dissipation at TA=25oC, Tp=1ms (Note 1) Steady state power dissipation at TL=75oC lead lengths .375", 9.5mm (Note 2) SYMBOL PPK PD VALUE 400 1 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load (Note 3) IFSM 40 Junction to leads Junction to ambient on printed circuit L lead=10mm RθJL RθJA 60 100 Operating junction temperature range TJ Storage temperature range TSTG Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above TA=25oC Per Fig. 2 Note 2: Mounted on 5 x 5 mm Copper Pads to Each Terminal - 55 to +175 - 55 to +175 Note 3: 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 Pulses Per Minute Maximum UNIT Watts Watts A oC/W oC/W OC OC ORDERING INFORMATION PART NO. PACKING CODE GREEN COMPOUND PACKAGE CODE A0 DO-41 BZW04-xxx (Note 1) R0 R1 Suffix "G" DO-41 DO-41 B0 DO-41 Note 1: "xxx" defines voltage from 5.8V (BZW04-5V8) to 376V (BZW04-376) PACKING 3,000 / Ammo box (52mm taping) 5,000 / 13" Paper reel 5,000 / 13" Paper reel (Reverse) 1,000 / Bulk packing EXAMPLE PREFERRED P/N BZW04-94 A0 BZW04-94 A0G PART NO. BZW04-94 BZW04-94 PACKING CODE A0 A0 GREEN COMPOUND CODE G DESCRIPTION Green compound Document Number: DS_D1406028 Version: H14 CREAT BY ART RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG. 1 PEAK PULSE POWER RATING CURVE 100 NON-REPETITIVE PULSE WAVEFORM SHOWN in FIG.3 10 TA = 25oC PPPM, PEAK PULSE POWER, W 1 0.1 0.0001 0.001 0.01 0.1 tp, PULSE WIDTH, (mS) 1 10 PEAK PULSE POWER(PPP) OR CURRENT (IPP) A DERATING IN PERCENTAGE (%) BZW04 SERIES Taiwan Semiconductor 120 100 80 60 40 20 0 0 FIG.2 PULSE DERATING CURVE 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (oC) 175 PEAK PULSE CURRENT (%) 140 120 100 80 60 40 20 0 0 FIG. 3 CLAMPING POWER PULSE WAVEFORM tr=10μs PULSE WIDTH(td) is DEFINED as the POINT WHERE the PEAK CURRENT DECAYS to 50% OF IPPM Peak Value IPPM Half Value- 10/1000μs, WAVEFORM as DEFINED by R.E.A. td 0.5 1 1.5 2 2.5 3 3.5 4 t, TIME ms PM(AV), STEADY STATE POWER DISSIPATION (W) FIG.4 STEADY STATE POWER DERATING CURVE 1.25 1 0.75 0.5 0.25 0 0 25 50 75 100 125 150 175 200 TL, LEAD TEMPERATURE (oC) PEAK FORWARD SURGE CURRENT(A) FIG. 5 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT UNIDIRECTIONAL ONLY 50 40 30 20 10 8.3ms Single Half Sine Wave 0 1 10 V(BR), BREAKDOWN VOLTAGE (V) 100 Document Number: DS_D1406028 Version: H14 INSTANTANEOUS REVERSE CURRENT(A) A JUNCTION CAPACITANCE(pF) CREAT BY ART FIG. 6 TYPICAL REVERSE CHARACTERASTICS 100 10 MEASURED AT DEVICES STAND-OFF VOLTAGE, VWM 1 0.1 0.01 0 50 100 150 200 250 300 350 400 450 500 V(BR), BREAKDOWN VOLTAGE (V) BZW04 SERIES Taiwan Semiconductor 100000 10000 FIG.7 TYPICAL JUNCTION CAPACITANCE UNDIRECTIONAL MEASURE AT ZERO BIAS f=1.0MHz Vsig=50mVp-p 1000 100 1.0 MEASURE AT STAND-OFF VOLTAGE, VWM 10.0 V(BR), BREAKDOWN VOLTAGE (V) 100.0 Document Number: DS_D1406028 Version: H14 BZW04 SERIES Taiwan Semiconductor Breakdown Test Voltage Current Device @ IT (Note 1) VBR V IT mA Unidirectional Bidirectional Min Max BZW04-5V8 BZW04-5V8B 6.45 7.14 10 BZW04-6V4 BZW04-6V4B 7.13 7.88 10 BZW04-7V0 BZW04-7V0B 7.79 8.61 10 BZW04-7V8 BZW04-7V8B 8.65 9.55 1 BZW04-8V5 BZW04-8V5B 9.50 10.5 1 BZW04-9V4 BZW04-9V4B 10.5 11.6 1 BZW04-10 BZW04-10B 11.4 12.6 1 BZW04-11 BZW04-11B 12.4 13.7 1 BZW04-13 BZW04-13B 14.3 15.8 1 BZW04-14 BZW04-14B 15.2 16.8 1 BZW04-15 BZW04-15B 17.1 18.9 1 BZW04-17 BZW04-17B 19.0 21.0 1 BZW04-19 BZW04-19B 20.9 23.1 1 BZW04-20 BZW04-20B 22.8 25.2 1 BZW04-23 BZW04-23B 25.7 28.4 1 BZW04-26 BZW04-26B 28.5 31.5 1 BZW04-28 BZW04-28B 31.4 34.7 1 BZW04-31 BZW04-31B 34.2 37.8 1 BZW04-33 BZW04-33B 37.1 41.0 1 BZW04-37 BZW04-37B 40.9 45.2 1 BZW04-40 BZW04-40B 44.7 49.4 1 BZW04-44 BZW04-44B 48.5 53.6 1 BZW04-48 BZW04-48B 53.2 58.8 1 BZW04-53 BZW04-53B 58.9 65.1 1 BZW04-58 BZW04-58B 64.6 71.4 1 BZW04-64 BZW04-64B 71.3 78.8 1 BZW04-70 BZW04-70B 77.9 86.1 1 BZW04-78 BZW04-78B 86.5 95.5 1 BZW04-85 BZW04-85B 95 105 1 BZW04-94 BZW04-94B 105 116 1 BZW04-102 BZ.


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