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VS-ST1280C06K0 Dataheets PDF



Part Number VS-ST1280C06K0
Manufacturers Vishay
Logo Vishay
Description Phase Control Thyristors
Datasheet VS-ST1280C06K0 DatasheetVS-ST1280C06K0 Datasheet (PDF)

www.vishay.com VS-ST1280C..K Series Vishay Semiconductors Phase Control Thyristors (Hockey-PUK Version), 2310 A A-24 (K-PUK) PRODUCT SUMMARY Package Diode variation IT(AV) VDRM/VRRM VTM IGT TJ A-24 (K-PUK) Single SCR 2310 A 400 V, 600 V 1.44 V 100 mA -40 °C to 125 °C FEATURES • Center amplifying gate • Metal case with ceramic insulator • International standard case A-24 (K-PUK) • High profile hockey PUK • Material categorization: For definitions of compliance please see www.vishay.com/doc?.

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www.vishay.com VS-ST1280C..K Series Vishay Semiconductors Phase Control Thyristors (Hockey-PUK Version), 2310 A A-24 (K-PUK) PRODUCT SUMMARY Package Diode variation IT(AV) VDRM/VRRM VTM IGT TJ A-24 (K-PUK) Single SCR 2310 A 400 V, 600 V 1.44 V 100 mA -40 °C to 125 °C FEATURES • Center amplifying gate • Metal case with ceramic insulator • International standard case A-24 (K-PUK) • High profile hockey PUK • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS • DC motor controls • Controlled DC power supplies • AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) IT(RMS) ITSM I2t VDRM/VRRM tq TJ Ths Ths 50 Hz 60 Hz 50 Hz 60 Hz Typical VALUES 2310 55 4150 25 42 500 44 500 9027 8240 400 to 600 200 -40 to 125 UNITS A °C A °C A kA2s V μs °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VS-ST1280C..K 04 06 VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 400 600 VRSM, MAXIMUM IDRM/IRRM MAXIMUM NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM V mA 500 100 700 Revision: 18-Dec-13 1 Document Number: 93718 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-ST1280C..K Series Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at heatsink temperature IT(AV) Maximum RMS on-state current IT(RMS) Maximum peak, one-cycle non-repetitive surge current ITSM Maximum I2t for fusing I2t Maximum I2√t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage Maximum holding current Typical latching current I2√t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL TEST CONDITIONS 180° conduction, half sine wave Double side (single side) cooled 25 °C heatsink temperature double side cooled t = 10 ms t = 8.3 ms No voltage reapplied t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms 100 % VRRM reapplied No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum t = 10 ms t = 8.3 ms 100 % VRRM reapplied t = 0.1 to 10 ms, no voltage reapplied (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π x IT(AV)), TJ = TJ maximum (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π x IT(AV)), TJ = TJ maximum Ipk = 8000 A, TJ = TJ maximum, tp = 10 ms sine pulse TJ = 25 °C, anode supply 12 V resistive load VALUES UNITS 2310 (885) A 55 (85) °C 4150 42 500 44 500 A 35 700 37 400 9027 8241 6383 kA2s 5828 90 270 kA2√s 0.83 V 0.90 0.077 0.068 mΩ 1.44 V 600 1000 mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current Typical delay time Typical turn-off time BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dI/dt td tq TEST CONDITIONS Gate drive 20 V, 20 Ω, tr ≤ 1 μs TJ = TJ maximum, anode voltage ≤ 80 % VDRM Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs, VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 Ω, tp = 500 μs VALUES 1000 1.9 200 UNITS A/μs μs SYMBOL TEST CONDITIONS dV/dt IRRM, IDRM TJ = TJ maximum linear to 80 % rated VDRM TJ = TJ maximum, rated VDRM/VRRM applied VALUES 500 UNIT S V/μs 100 mA Revision: 18-Dec-13 2 Document Number: 93718 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage DC gate current required to trigger DC gate voltage required to trigger DC gate current not to trigger DC gate voltage not to trigger VS-ST1280C..K Series Vishay Semiconductors SYMBOL PGM PG(AV) IGM + VGM - VGM IGT VGT TEST CONDITIONS TJ = TJ maximum, tp ≤ 5 ms TJ = TJ maximum, f = 50 Hz, d% = 50 TJ = TJ maximum, tp ≤ 5 ms TJ = -40 °C TJ = 25 °C TJ = 125 °C TJ = -40 °C TJ = 25 °C TJ = 125 °C Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied VALUES UNITS typ. max. 16 W 3 3.0 A 20 V 5.0 200 100 200 mA 50 1.4 1.1 3.0 V 0.9 - IGD Maximum gate current/voltage not to trigger is the maximum TJ = TJ maximum value which will not trigger any VGD unit with rated VDRM anode to cathode applied 10 0.25 mA V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBO.


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