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VS-ST1280C..K Series
Vishay Semiconductors
Phase Control Thyristors (Hockey-PUK Version), 2310 A
A-24 (K-PUK)
PRODUCT SUMMARY
Package Diode variation
IT(AV) VDRM/VRRM
VTM IGT TJ
A-24 (K-PUK) Single SCR
2310 A 400 V, 600 V
1.44 V 100 mA -40 °C to 125 °C
FEATURES • Center amplifying gate • Metal case with ceramic insulator • International standard case A-24 (K-PUK) • High profile hockey PUK • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS • DC motor controls • Controlled DC power supplies • AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
IT(RMS)
ITSM
I2t VDRM/VRRM tq TJ
Ths
Ths 50 Hz 60 Hz 50 Hz 60 Hz
Typical
VALUES
2310 55
4150 25
42 500 44 500 9027 8240 400 to 600
200 -40 to 125
UNITS A °C A °C
A
kA2s
V μs °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE CODE
VS-ST1280C..K
04 06
VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V
400
600
VRSM, MAXIMUM
IDRM/IRRM MAXIMUM
NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM
V mA
500 100
700
Revision: 18-Dec-13
1 Document Number: 93718
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-ST1280C..K Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current at heatsink temperature
IT(AV)
Maximum RMS on-state current
IT(RMS)
Maximum peak, one-cycle non-repetitive surge current
ITSM
Maximum I2t for fusing
I2t
Maximum I2√t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage Maximum holding current Typical latching current
I2√t VT(TO)1 VT(TO)2
rt1 rt2 VTM IH IL
TEST CONDITIONS
180° conduction, half sine wave Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms t = 8.3 ms
No voltage reapplied
t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms
100 % VRRM reapplied
No voltage reapplied
Sinusoidal half wave, initial TJ = TJ maximum
t = 10 ms t = 8.3 ms
100 % VRRM reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π x IT(AV)), TJ = TJ maximum (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π x IT(AV)), TJ = TJ maximum Ipk = 8000 A, TJ = TJ maximum, tp = 10 ms sine pulse
TJ = 25 °C, anode supply 12 V resistive load
VALUES UNITS
2310 (885) A
55 (85)
°C
4150
42 500
44 500
A
35 700
37 400
9027
8241 6383
kA2s
5828
90 270 kA2√s
0.83 V
0.90
0.077 0.068
mΩ
1.44 V
600 1000
mA
SWITCHING
PARAMETER Maximum non-repetitive rate of rise of turned-on current Typical delay time
Typical turn-off time
BLOCKING
PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current
SYMBOL dI/dt td tq
TEST CONDITIONS
Gate drive 20 V, 20 Ω, tr ≤ 1 μs TJ = TJ maximum, anode voltage ≤ 80 % VDRM
Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs, VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 Ω, tp = 500 μs
VALUES 1000 1.9 200
UNITS A/μs
μs
SYMBOL
TEST CONDITIONS
dV/dt
IRRM, IDRM
TJ = TJ maximum linear to 80 % rated VDRM TJ = TJ maximum, rated VDRM/VRRM applied
VALUES 500
UNIT S
V/μs
100 mA
Revision: 18-Dec-13
2 Document Number: 93718
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
TRIGGERING
PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
VS-ST1280C..K Series
Vishay Semiconductors
SYMBOL PGM PG(AV) IGM + VGM - VGM
IGT
VGT
TEST CONDITIONS
TJ = TJ maximum, tp ≤ 5 ms TJ = TJ maximum, f = 50 Hz, d% = 50
TJ = TJ maximum, tp ≤ 5 ms
TJ = -40 °C TJ = 25 °C TJ = 125 °C TJ = -40 °C TJ = 25 °C TJ = 125 °C
Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied
VALUES UNITS
typ. max. 16 W 3 3.0 A 20 V 5.0
200 100 200 mA 50 1.4 1.1 3.0 V 0.9 -
IGD
Maximum gate current/voltage not to trigger is the maximum
TJ = TJ maximum value which will not trigger any
VGD
unit with rated VDRM anode to cathode applied
10 0.25
mA V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBO.