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VS-ST280CH Series
Vishay Semiconductors
Phase Control Thyristors (Hockey PUK Version), 500 A
TO-200AB (A-PUK)
PRODUCT SUMMARY
Package Diode variation
IT(AV) VDRM/VRRM
VTM IGT TJ
TO-200AB (A-PUK) Single SCR 500 A 400 V, 600 V 1.35 V 90 mA
-40 °C to 150 °C
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case TO-200AB (A-PUK)
• Extended temperature range
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
IT(RMS)
ITSM
I2t VDRM/VRRM tq TJ
Ths
Ths 50 Hz 60 Hz 50 Hz 60 Hz
Typical
VALUES
500 80 1130 25 7200 7500 260 230 400 to 600 100 -40 to 150
UNITS A °C A °C
A
kA2s
V μs °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE CODE
VS-ST280CH..C
04 06
VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE
V
400
600
VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE
V
500 700
IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM
mA
75
Revision: 16-Dec-13
1 Document Number: 94401
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-ST280CH Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current at heatsink temperature
IT(AV)
Maximum RMS on-state current
IT(RMS)
Maximum peak, one-cycle non-repetitive surge current
ITSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage Maximum holding current Maximum (typical) latching current
I2t VT(TO)1 VT(TO)2
rt1 rt2 VTM IH IL
TEST CONDITIONS
180° conduction, half sine wave double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms t = 8.3 ms
No voltage reapplied
t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms
100 % VRRM reapplied
No voltage reapplied
Sinusoidal half wave, initial TJ = TJ maximum
t = 10 ms t = 8.3 ms
100 % VRRM reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum Ipk = 1000 A, TJ = TJ maximum, tp = 10 ms sine pulse
TJ = 25 °C, anode supply 12 V resistive load
VALUES UNITS
500 (185)
A
80 (110)
°C
1130
7200
7500
A
6000
6300
260
235 kA2s
180
165
2600
kA2s
0.84 V
0.88
0.50 m
0.47
1.35 V
600 1000 (300)
mA
SWITCHING
PARAMETER Maximum non-repetitive rate of rise of turned-on current
Typical delay time
Typical turn-off time
SYMBOL dI/dt td tq
TEST CONDITIONS
Gate drive 20 V, 20 , tr 1 μs TJ = TJ maximum, anode voltage 80 % VDRM
Gate current 1 A, dIg/dt = 1 A/μs Vd 0.67 % VDRM, TJ = 25 °C
ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/μs, VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs
VALUES 1000 1.0 100
UNITS A/μs
μs
BLOCKING
PARAMETER
Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current
SYMBOL
TEST CONDITIONS
dV/dt
IRRM, IDRM
TJ = TJ maximum linear to 80 % rated VDRM TJ = TJ maximum, rated VDRM/VRRM applied
VALUES 500
UNIT S
V/μs
75 mA
Revision: 16-Dec-13
2 Document Number: 94401
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-ST280CH Series
Vishay Semiconductors
TRIGGERING
PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
SYMBOL PGM PG(AV) IGM + VGM - VGM
IGT
VGT
IGD
VGD
TEST CONDITIONS
TJ = TJ maximum, tp 5 ms TJ = TJ maximum, f = 50 Hz, d% = 50 TJ = TJ maximum, tp 5 ms
TJ = TJ maximum, tp 5 ms
TJ = - 40 °C TJ = 25 °C TJ = 150 °C TJ = - 40 °C TJ = 25 °C TJ = 150 °C
Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied
TJ = TJ maximum
Maximum gate current/voltage not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to cathode applied
VALUES TYP. MAX.
10.0 2.0 3.0 20 5.0 180 90 150 30 2.9 1.8 3.0 1.0 -
10
0.30
UNITS W A V
mA
V.