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VS-ST280CH06C1 Dataheets PDF



Part Number VS-ST280CH06C1
Manufacturers Vishay
Logo Vishay
Description Phase Control Thyristors
Datasheet VS-ST280CH06C1 DatasheetVS-ST280CH06C1 Datasheet (PDF)

www.vishay.com VS-ST280CH Series Vishay Semiconductors Phase Control Thyristors (Hockey PUK Version), 500 A TO-200AB (A-PUK) PRODUCT SUMMARY Package Diode variation IT(AV) VDRM/VRRM VTM IGT TJ TO-200AB (A-PUK) Single SCR 500 A 400 V, 600 V 1.35 V 90 mA -40 °C to 150 °C FEATURES • Center amplifying gate • Metal case with ceramic insulator • International standard case TO-200AB (A-PUK) • Extended temperature range • Material categorization: For definitions of compliance please see www.vishay.

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www.vishay.com VS-ST280CH Series Vishay Semiconductors Phase Control Thyristors (Hockey PUK Version), 500 A TO-200AB (A-PUK) PRODUCT SUMMARY Package Diode variation IT(AV) VDRM/VRRM VTM IGT TJ TO-200AB (A-PUK) Single SCR 500 A 400 V, 600 V 1.35 V 90 mA -40 °C to 150 °C FEATURES • Center amplifying gate • Metal case with ceramic insulator • International standard case TO-200AB (A-PUK) • Extended temperature range • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS • DC motor controls • Controlled DC power supplies • AC controllers         MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) IT(RMS) ITSM I2t VDRM/VRRM tq TJ Ths Ths 50 Hz 60 Hz 50 Hz 60 Hz Typical VALUES 500 80 1130 25 7200 7500 260 230 400 to 600 100 -40 to 150 UNITS A °C A °C A kA2s V μs °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VS-ST280CH..C 04 06 VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 400 600 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 500 700 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 75 Revision: 16-Dec-13 1 Document Number: 94401 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-ST280CH Series Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at heatsink temperature IT(AV) Maximum RMS on-state current IT(RMS) Maximum peak, one-cycle non-repetitive surge current ITSM Maximum I2t for fusing I2t Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage Maximum holding current Maximum (typical) latching current I2t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL TEST CONDITIONS 180° conduction, half sine wave double side (single side) cooled DC at 25 °C heatsink temperature double side cooled t = 10 ms t = 8.3 ms No voltage reapplied t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms 100 % VRRM  reapplied No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum t = 10 ms t = 8.3 ms 100 % VRRM  reapplied t = 0.1 to 10 ms, no voltage reapplied (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum (I >  x IT(AV)), TJ = TJ maximum (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum (I >  x IT(AV)), TJ = TJ maximum Ipk = 1000 A, TJ = TJ maximum, tp = 10 ms sine pulse TJ = 25 °C, anode supply 12 V resistive load VALUES UNITS 500 (185) A 80 (110) °C 1130 7200 7500 A 6000 6300 260 235 kA2s 180 165 2600 kA2s 0.84 V 0.88 0.50 m 0.47 1.35 V 600 1000 (300) mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current Typical delay time Typical turn-off time SYMBOL dI/dt td tq TEST CONDITIONS Gate drive 20 V, 20 , tr  1 μs TJ = TJ maximum, anode voltage  80 % VDRM Gate current 1 A, dIg/dt = 1 A/μs Vd 0.67 % VDRM, TJ = 25 °C ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/μs,  VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs VALUES 1000 1.0 100 UNITS A/μs μs BLOCKING PARAMETER Maximum critical rate of rise of  off-state voltage Maximum peak reverse and  off-state leakage current SYMBOL TEST CONDITIONS dV/dt IRRM, IDRM TJ = TJ maximum linear to 80 % rated VDRM TJ = TJ maximum, rated VDRM/VRRM applied VALUES 500 UNIT S V/μs 75 mA Revision: 16-Dec-13 2 Document Number: 94401 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-ST280CH Series Vishay Semiconductors TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage DC gate current required to trigger DC gate voltage required to trigger DC gate current not to trigger DC gate voltage not to trigger SYMBOL PGM PG(AV) IGM + VGM - VGM IGT VGT IGD VGD TEST CONDITIONS TJ = TJ maximum, tp  5 ms TJ = TJ maximum, f = 50 Hz, d% = 50 TJ = TJ maximum, tp  5 ms TJ = TJ maximum, tp  5 ms TJ = - 40 °C TJ = 25 °C TJ = 150 °C TJ = - 40 °C TJ = 25 °C TJ = 150 °C Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied TJ = TJ maximum Maximum gate current/voltage not to trigger is the maximum  value which will not trigger any unit with rated VDRM anode to cathode applied VALUES TYP. MAX. 10.0 2.0 3.0 20 5.0 180 90 150 30 2.9 1.8 3.0 1.0 - 10 0.30 UNITS W A V mA V.


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