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VS-22RIA Series
Vishay Semiconductors
Medium Power Phase Control Thyristors (Stud Version), 22 A
TO-208AA (TO-48)
PRODUCT SUMMARY
Package Diode variation
IT(AV) VDRM/VRRM
VTM IGT TJ
TO-208AA (TO-48) Single SCR 22 A
100 V to 1200 V 1.70 V 60 mA
-65 °C to 125 °C
FEATURES • Improved glass passivation for high reliability
and exceptional stability at high temperature • High dI/dt and dV/dt capabilities • Standard package • Low thermal resistance • Metric threads version available • Types up to 1200 V VDRM/VRRM • Designed and qualified for industrial and consumer level • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS • Medium power switching • Phase control applications • Can be supplied to meet stringent military, aerospace and
other high reliability requirements
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV) IT(RMS) ITSM
I2t
VDRM/VRRM tq TJ
TC
50 Hz 60 Hz 50 Hz 60 Hz
Typical
VALUES
22 85 35 400 420 793 724 100 to 1200 110 -65 to 125
UNITS A °C A
A
A2s
V μs °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE CODE
VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE (1)
V
10 100
20 200
VS-22RIA
40 60
400 600
80 800
100 1000
120 1200
VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE (2) V
150
300 500 700 900 1100 1300
IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM
mA 20
10
Notes
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs (2) For voltage pulses with tp 5 ms
Revision: 11-Mar-14
1 Document Number: 93700
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-22RIA Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current at case temperature
IT(AV)
Maximum RMS on-state current
IT(RMS)
Maximum peak, one-cycle non-repetitive surge current
ITSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage Maximum holding current Latching current
I2t
VT(TO)1 VT(TO)2
rt1
rt2 VTM IH
IL
TEST CONDITIONS 180° sinusoidal conduction
t = 10 ms No voltage t = 8.3 ms reapplied
t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms
100 % VRRM reapplied
No voltage reapplied
Sinusoidal half wave, initial TJ =TJ maximum
t = 10 ms 100 % VRRM t = 8.3 ms reapplied
t = 0.1 to 10 ms, no voltage reapplied, TJ = TJ maximum (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum Ipk = 70 A, TJ = 25 °C TJ = 25 °C, anode supply 6 V, resistive load
VALUES 22 85 35 400 420 335 355 793 724 560 515
7930
0.83 0.95
14.9
13.4
1.70 130 200
UNITS A °C A
A
A2s
A2s V
m V mA
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Maximum rate of rise of turned-on current
Typical turn-on time
VDRM 600 V VDRM 800 V VDRM 1000 V VDRM 1600 V
Typical reverse recovery time
Typical turn-off time
dI/dt
tgt trr tq
TJ = TJ maximum, VDM = Rated VDRM Gate pulse = 20 V, 15 , tp = 6 μs, tr = 0.1 μs maximum ITM = (2 x rated dI/dt) A
TJ = 25 °C, at rated VDRM/VRRM, TJ = 125 °C
TJ = TJ maximum, ITM = IT(AV), tp > 200 μs, dI/dt = - 10 A/μs
TJ = TJ maximum, ITM = IT(AV), tp > 200 μs, VR = 100 V, dI/dt = - 10 A/μs, dV/dt = 20 V/μs linear to 67 % VDRM, gate bias 0 V to 100 W
200 180 160 150 0.9
4
110
Note • tq = 10 μs up to 600 V, tq = 30 μs up to 1600 V available on special request
UNITS A/μs
μs
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = TJ maximum linear to 100 % rated VDRM TJ = TJ maximum linear to 67 % rated VDRM
Note (1) Available with: dV/dt = 1000 V/μs, to complete code add S90 i.e. 22RIA120S90
VALUES 100
300 (1)
UNITS V/μs
Revision: 11-Mar-14
2 Document Number: 93700
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-22RIA Series
Vishay Semiconductors
TRIGGERING
PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
SYMBOL PGM PG(AV) IGM -VGM
IGT
VGT
IGD
VGD
TEST CONDITIONS
VALUES
T.