VS-30TPS..PbF Series, VS-30TPS..-M3 Series
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Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 30 A
2 (A)
3 2 1 TO-247AC
PRODUCT SUMMARY
Package Diode variation
IT(AV) VDRM/VRRM
VTM IGT TJ
1 (K) (G) 3
TO-247AC Single SCR
20 A 800 V, 1200 V
1.3 V 45 mA -40 °C to 125 °C
FEATURES
• Designed and qualified according to JEDEC®-JESD47
• 125 °C max. operating junction temperature
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
Available
APPLICATIONS • Typical usage is in input rectification crowbar (soft start)
and AC switch in motor control, UPS, welding and battery charge
DESCRIPTION The VS-30TPS... high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature.
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV) IRMS VRRM/VDRM ITSM VT dV/dt
Sinusoidal waveform 20 A, TJ = 25 °C
dI/dt
TJ
VALUES 20 30
800/1200 300 1.3 500 150
- 40 to 125
UNITS
A
V A V V/μs A/μs °C
VOLTAGE RATINGS
PART NUMBER
VS-30TPS08PbF, VS-30TPS08-M3 VS-30TPS12PbF, VS-30TPS12-M3
VRRM/VDRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE
V
800
1200
VRSM, MAXIMUM NON-REPETITIVE PEAK
REVERSE VOLTAGE V
900
1300
IRRM/IDRM AT 125 °C
mA
10
Revision: 06-Feb-14
1 Document Number: 94386
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30TPS..PbF Series, VS-30TPS..-M3 Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current Maximum RMS on-state current
IT(AV) IRMS
Maximum peak, one-cycle non-repetitive surge current
ITSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing Maximum on-state voltage drop On-state slope resistance Threshold voltage
I2t VTM
rt VT(TO)
Maximum reverse and direct leakage current IRM/IDM
Maximum holding current Maximum latching current Maximum rate of rise of off-state voltage Maximum rate of rise of turned-on current
IH IL dV/dt dI/dt
TEST CONDITIONS
VALUES
TC = 95 °C, 180° conduction half sine wave
20 30
10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied
250 300
10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied
310 442
t = 0.1 to 10 ms, no voltage reapplied
4420
20 A, TJ = 25 °C TJ = 125 °C
1.3 12 1.0
TJ = 25 °C TJ = 125 °C
VR = Rated VRRM/VDRM
Anode supply = 6 V, resistive load, initial IT = 1 A, TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
TJ = TJ maximum, linear to 80 % VDRM, Rg-k = Open
0.5 10 150 200 500 150
UNITS
A
A2s A2s
V m V
mA
V/µs A/µs
TRIGGERING
PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak negative gate voltage
SYMBOL PGM PG(AV) + IGM - VGM
Maximum required DC gate current to trigger IGT
Maximum required DC gate voltage to trigger
Maximum DC gate voltage not to trigger Maximum DC gate current not to trigger
VGT
VGD IGD
TEST CONDITIONS
Anode supply = 6 V, resistive load, TJ = - 10 °C Anode supply = 6 V, resistive load, TJ = 25 °C Anode supply = 6 V, resistive load, TJ = 125 °C Anode supply = 6 V, resistive load, TJ = - 10 °C Anode supply = 6 V, resistive load, TJ = 25 °C Anode supply = 6 V, resistive load, TJ = 125 °C TJ = 125 °C, VDRM = Rated value
VALUES 8.0 2.0 1.5 10 60 45 20 2.5 2.0 1.0 0.25 2.0
UNITS W A V mA
V
mA
SWITCHING
PARAMETER Typical turn-on time Typical reverse recovery time Typical turn-off time
SYMBOL tgt trr tq
TJ = 25 °C TJ = 125 °C
TEST CONDITIONS
VALUES 0.9 4 110
UNITS µs
Revision: 06-Feb-14
2 Document Number: 94386
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30TPS..PbF Series, VS-30TPS..-M3 Series
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient Maximum thermal resistance, case to heatsink
TJ, TStg RthJC RthJA RthCS
DC operation Mounting surface, smooth and greased
Approximate weight
Mounting torque
minimum maximum
Marking device
Case style TO-247AC (JEDEC)
VALUES -40 to 125
UNITS °C
0.8
40 °C/W
0.2
6g
0.21 oz.
6 (5) 12 (10)
kgf · cm (lbf · in)
30TPS08
30TPS12
Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C)
130 30TPS.. Series R.