DatasheetsPDF.com

VS-30TPS08PbF Dataheets PDF



Part Number VS-30TPS08PbF
Manufacturers Vishay
Logo Vishay
Description Thyristor
Datasheet VS-30TPS08PbF DatasheetVS-30TPS08PbF Datasheet (PDF)

VS-30TPS..PbF Series, VS-30TPS..-M3 Series www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 30 A 2 (A) 3 2 1 TO-247AC PRODUCT SUMMARY Package Diode variation IT(AV) VDRM/VRRM VTM IGT TJ 1 (K) (G) 3 TO-247AC Single SCR 20 A 800 V, 1200 V 1.3 V 45 mA -40 °C to 125 °C FEATURES • Designed and qualified according to JEDEC®-JESD47 • 125 °C max. operating junction temperature • Material categorization:  For definitions of compliance please see www.vishay.com/doc?9.

  VS-30TPS08PbF   VS-30TPS08PbF


Document
VS-30TPS..PbF Series, VS-30TPS..-M3 Series www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 30 A 2 (A) 3 2 1 TO-247AC PRODUCT SUMMARY Package Diode variation IT(AV) VDRM/VRRM VTM IGT TJ 1 (K) (G) 3 TO-247AC Single SCR 20 A 800 V, 1200 V 1.3 V 45 mA -40 °C to 125 °C FEATURES • Designed and qualified according to JEDEC®-JESD47 • 125 °C max. operating junction temperature • Material categorization:  For definitions of compliance please see www.vishay.com/doc?99912 Available APPLICATIONS • Typical usage is in input rectification crowbar (soft start) and AC switch in motor control, UPS, welding and battery charge DESCRIPTION The VS-30TPS... high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature. MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) IRMS VRRM/VDRM ITSM VT dV/dt Sinusoidal waveform 20 A, TJ = 25 °C dI/dt TJ VALUES 20 30 800/1200 300 1.3 500 150 - 40 to 125 UNITS A V A V V/μs A/μs °C VOLTAGE RATINGS PART NUMBER VS-30TPS08PbF, VS-30TPS08-M3 VS-30TPS12PbF, VS-30TPS12-M3 VRRM/VDRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 800 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 900 1300 IRRM/IDRM AT 125 °C mA 10 Revision: 06-Feb-14 1 Document Number: 94386 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30TPS..PbF Series, VS-30TPS..-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current Maximum RMS on-state current IT(AV) IRMS Maximum peak, one-cycle non-repetitive surge current ITSM Maximum I2t for fusing I2t Maximum I2t for fusing Maximum on-state voltage drop On-state slope resistance Threshold voltage I2t VTM rt VT(TO) Maximum reverse and direct leakage current IRM/IDM Maximum holding current Maximum latching current Maximum rate of rise of off-state voltage Maximum rate of rise of turned-on current IH IL dV/dt dI/dt TEST CONDITIONS VALUES TC = 95 °C, 180° conduction half sine wave 20 30 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 250 300 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 310 442 t = 0.1 to 10 ms, no voltage reapplied 4420 20 A, TJ = 25 °C TJ = 125 °C 1.3 12 1.0 TJ = 25 °C TJ = 125 °C VR = Rated VRRM/VDRM Anode supply = 6 V, resistive load, initial IT = 1 A, TJ = 25 °C Anode supply = 6 V, resistive load, TJ = 25 °C TJ = TJ maximum, linear to 80 % VDRM, Rg-k = Open 0.5 10 150 200 500 150 UNITS A A2s A2s V m V mA V/µs A/µs TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak negative gate voltage SYMBOL PGM PG(AV) + IGM - VGM Maximum required DC gate current to trigger IGT Maximum required DC gate  voltage to trigger Maximum DC gate voltage not to trigger Maximum DC gate current not to trigger VGT VGD IGD TEST CONDITIONS Anode supply = 6 V, resistive load, TJ = - 10 °C Anode supply = 6 V, resistive load, TJ = 25 °C Anode supply = 6 V, resistive load, TJ = 125 °C Anode supply = 6 V, resistive load, TJ = - 10 °C Anode supply = 6 V, resistive load, TJ = 25 °C Anode supply = 6 V, resistive load, TJ = 125 °C TJ = 125 °C, VDRM = Rated value VALUES 8.0 2.0 1.5 10 60 45 20 2.5 2.0 1.0 0.25 2.0 UNITS W A V mA V mA SWITCHING PARAMETER Typical turn-on time Typical reverse recovery time Typical turn-off time SYMBOL tgt trr tq TJ = 25 °C TJ = 125 °C TEST CONDITIONS VALUES 0.9 4 110 UNITS µs Revision: 06-Feb-14 2 Document Number: 94386 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30TPS..PbF Series, VS-30TPS..-M3 Series www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction and storage temperature range Maximum thermal resistance,  junction to case Maximum thermal resistance,  junction to ambient Maximum thermal resistance,  case to heatsink TJ, TStg RthJC RthJA RthCS DC operation Mounting surface, smooth and greased Approximate weight Mounting torque minimum maximum Marking device Case style TO-247AC (JEDEC) VALUES -40 to 125 UNITS °C 0.8 40 °C/W 0.2 6g 0.21 oz. 6 (5) 12 (10) kgf · cm (lbf · in) 30TPS08 30TPS12 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) 130 30TPS.. Series R.


VS-30TPS16-M3 VS-30TPS08PbF VS-30TPS08-M3


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)