VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series
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Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 70 A
2 (A)
1 2 3
Super TO-247
1 (K) (G) 3
PRIMARY CHARACTERISTICS
IT(AV) VDRM/VRRM
VTM IGT TJ Package
70 A 1200 V, 1600 V
1.25 V 100 mA -40 °C to +125 °C Super TO-247
Circuit configuration
Single SCR
FEATURES • High surge capability • High voltage input rectification • Designed and qualified according to
JEDEC®-JESD 47 • Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS • AC switches • High voltage input rectification (soft start) • High current crow-bar • Other phase-control circuits • Designed to be used with Vishay input diodes, switches,
and output rectifiers which are available in identical package outlines
DESCRIPTION The VS-70TPS.. PbF high voltage series of silicon controlled rectifiers are specifically designed for high and medium power switching, and phase control applications.
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV) IRMS VRRM/VDRM ITSM VT dV/dt
Sinusoidal waveform Lead current limitation Range
100 A, TJ = 25 °C
dI/dt
TJ
VALUES 70 75
1200 to 1600 1100 1.4 500 150
-40 to +125
UNITS
A
V A V V/μs A/μs °C
VOLTAGE RATINGS
PART NUMBER
VS-70TPS12PbF VS-70TPS16PbF
VRRM/VDRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE
V
1200
1600
VRSM, MAXIMUM NON-REPETITIVE PEAK
REVERSE VOLTAGE V
1300
1700
IRRM/IDRM AT 125 °C
mA
15
Revision: 05-Jun-2020
1
Document Number: 94391
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
Maximum continuous RMS on-state current as AC switch
IT(AV) IT(RMS)
Maximum peak, one-cycle non-repetitive surge current
ITSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum peak on-state voltage Maximum rate of rise of turned-on current Maximum holding current Maximum latching current
I2t VT(TO)1 VT(TO)2
rt1 rt2 VTM dI/dt IH IL
Maximum reverse and direct leakage current IRRM/IDRM
Maximum rate of rise of off-state voltage
dV/dt
TEST CONDITIONS TC = 82 °C, 180° conduction half sine wave
VALUES UNITS 70
Lead current limitation
75
10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 ms to 10 ms, no voltage reapplied
Initial TJ = TJ maximum
TJ = 125 °C
100 A, TJ = 25 °C
TJ = 25 °C
Anode supply = 6 V, resistive load, initial IT = 1 A, TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
TJ = 25 °C TJ = 125 °C TJ = 125 °C
VR = rated VRRM/VDRM (TJ = TJ max., linear to 80 %
VDRM = Rg- k = open)
930 1100 4325 6115 61 150 0.916 1.21 4.138 3.43 1.4 150 200 400 1.0
15 500
A
A2s A2s
V m
V A/μs
mA
V/μs
TRIGGERING
PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage
SYMBOL PGM PG(AV) IGM -VGM
Maximum required DC gate voltage to trigger VGT
Maximum required DC gate current to trigger IGT
Maximum DC gate voltage not to trigger
VGD
Maximum DC gate current not to trigger
IGD
T = 30 μs
TEST CONDITIONS
TJ = - 40 °C TJ = 25 °C TJ = 125 °C TJ = - 40 °C TJ = 25 °C TJ = 125 °C
Anode supply = 6 V resistive load Anode supply = 6 V resistive load
TJ = 125 °C, VDRM = rated value
VALUES UNITS
10 W
2.5
2.5
A
10
1.8 V
1.5
1.1
150
100
mA
80
0.25
V
6
mA
Revision: 05-Jun-2020
2
Document Number: 94391
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
TJ TStg
RthJC
DC operation
Maximum thermal resistance, junction to ambient
RthJA
Typical thermal resistance, case to heatsink
RthCS
Mounting surface, smooth and greased
Approximate weight
Mounting torque
minimum maximum
Marking device
Case style Super TO-247
VALUES -40 to +125 -40 to +150
0.27
UNITS °C
40
°C/W
0.2
6
g
.