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VS-70TPS12PbF Dataheets PDF



Part Number VS-70TPS12PbF
Manufacturers Vishay
Logo Vishay
Description Thyristor
Datasheet VS-70TPS12PbF DatasheetVS-70TPS12PbF Datasheet (PDF)

VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 70 A 2 (A) 1 2 3 Super TO-247 1 (K) (G) 3 PRIMARY CHARACTERISTICS IT(AV) VDRM/VRRM VTM IGT TJ Package 70 A 1200 V, 1600 V 1.25 V 100 mA -40 °C to +125 °C Super TO-247 Circuit configuration Single SCR FEATURES • High surge capability • High voltage input rectification • Designed and qualified according to JEDEC®-JESD 47 • Material categorization: for defini.

  VS-70TPS12PbF   VS-70TPS12PbF


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VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 70 A 2 (A) 1 2 3 Super TO-247 1 (K) (G) 3 PRIMARY CHARACTERISTICS IT(AV) VDRM/VRRM VTM IGT TJ Package 70 A 1200 V, 1600 V 1.25 V 100 mA -40 °C to +125 °C Super TO-247 Circuit configuration Single SCR FEATURES • High surge capability • High voltage input rectification • Designed and qualified according to JEDEC®-JESD 47 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • AC switches • High voltage input rectification (soft start) • High current crow-bar • Other phase-control circuits • Designed to be used with Vishay input diodes, switches, and output rectifiers which are available in identical package outlines DESCRIPTION The VS-70TPS.. PbF high voltage series of silicon controlled rectifiers are specifically designed for high and medium power switching, and phase control applications. MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) IRMS VRRM/VDRM ITSM VT dV/dt Sinusoidal waveform Lead current limitation Range 100 A, TJ = 25 °C dI/dt TJ VALUES 70 75 1200 to 1600 1100 1.4 500 150 -40 to +125 UNITS A V A V V/μs A/μs °C VOLTAGE RATINGS PART NUMBER VS-70TPS12PbF VS-70TPS16PbF VRRM/VDRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 1200 1600 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 1300 1700 IRRM/IDRM AT 125 °C mA 15 Revision: 05-Jun-2020 1 Document Number: 94391 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current Maximum continuous RMS on-state  current as AC switch IT(AV) IT(RMS) Maximum peak, one-cycle  non-repetitive surge current ITSM Maximum I2t for fusing I2t Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum peak on-state voltage Maximum rate of rise of turned-on current Maximum holding current Maximum latching current I2t VT(TO)1 VT(TO)2 rt1 rt2 VTM dI/dt IH IL Maximum reverse and direct leakage current IRRM/IDRM Maximum rate of rise of off-state voltage dV/dt TEST CONDITIONS TC = 82 °C, 180° conduction half sine wave VALUES UNITS 70 Lead current limitation 75 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 ms to 10 ms, no voltage reapplied Initial TJ = TJ maximum TJ = 125 °C 100 A, TJ = 25 °C TJ = 25 °C Anode supply = 6 V, resistive load, initial IT = 1 A, TJ = 25 °C Anode supply = 6 V, resistive load, TJ = 25 °C TJ = 25 °C TJ = 125 °C TJ = 125 °C VR = rated VRRM/VDRM  (TJ = TJ max., linear to 80 %  VDRM = Rg- k = open) 930 1100 4325 6115 61 150 0.916 1.21 4.138 3.43 1.4 150 200 400 1.0 15 500 A A2s A2s V m V A/μs mA V/μs TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage SYMBOL PGM PG(AV) IGM -VGM Maximum required DC gate voltage to trigger VGT Maximum required DC gate current to trigger IGT Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD T = 30 μs TEST CONDITIONS TJ = - 40 °C TJ = 25 °C TJ = 125 °C TJ = - 40 °C TJ = 25 °C TJ = 125 °C Anode supply = 6 V resistive load Anode supply = 6 V resistive load TJ = 125 °C, VDRM = rated value VALUES UNITS 10 W 2.5 2.5 A 10 1.8 V 1.5 1.1 150 100 mA 80 0.25 V 6 mA Revision: 05-Jun-2020 2 Document Number: 94391 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction temperature range Maximum storage temperature range Maximum thermal resistance,  junction to case TJ TStg RthJC DC operation Maximum thermal resistance,  junction to ambient RthJA Typical thermal resistance,  case to heatsink RthCS Mounting surface, smooth and greased Approximate weight Mounting torque minimum maximum Marking device Case style Super TO-247 VALUES -40 to +125 -40 to +150 0.27 UNITS °C 40 °C/W 0.2 6 g .


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