Elektronische Bauelemente
2SC5658
0.15A , 60V NPN Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “...
Elektronische Bauelemente
2SC5658
0.15A , 60V
NPN Plastic Encapsulated
Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURE
Low current (max. 150 mA) Low voltage (max. 50 V).
SOT-723
CLASSIFICATION OF hFE (1)
Product-Rank 2SC2658-Q 2SC2658-R
Range
120~270
180~390
Marking
BQ
BR
2SC2658-S 270~560 BS
Collector
3
1
Base
2
Emitter
REF.
A B C D E
Millimeter Min. Max.
1.150 0.750
-
1.250 0.850 0.500
1.150 1.250
0.800TYP.
REF.
F G H I
Millimeter Min. Max. 0.170 0.270 0.270 0.370
0 0.050
- 0.150
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature
VCBO VCEO VEBO
IC PC TJ, TSTG
60 50 7 150 100 150, -55 ~ 150
Unit
V V V mA mW °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test condition
Collector to Base Breakdown Voltage
V(BR)CBO
60
-
-
V IC=50µA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
50
-
-
V IC=1mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
7
-
-
V IE=50µA, IC=0
Collector Cut-Off Current
ICBO - - 0.1 µA VCB=60V, IE=0
Emitter Cut-Off Current
IEBO - - 0.1 µA VEB=7V, IC=0
DC Current Gain
hFE 120 - 560
VCE=6V, IC=1mA
Collector to Emitter Saturation Voltage VCE(sat)
-
- 0.4 V IC=50mA, IB=5mA
Transition Frequency
...