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2SC5658

SeCoS

NPN Transistor

Elektronische Bauelemente 2SC5658 0.15A , 60V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “...


SeCoS

2SC5658

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Description
Elektronische Bauelemente 2SC5658 0.15A , 60V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE Low current (max. 150 mA) Low voltage (max. 50 V). SOT-723 CLASSIFICATION OF hFE (1) Product-Rank 2SC2658-Q 2SC2658-R Range 120~270 180~390 Marking BQ BR 2SC2658-S 270~560 BS Collector 3 1 Base 2 Emitter REF. A B C D E Millimeter Min. Max. 1.150 0.750 - 1.250 0.850 0.500 1.150 1.250 0.800TYP. REF. F G H I Millimeter Min. Max. 0.170 0.270 0.270 0.370 0 0.050 - 0.150 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature VCBO VCEO VEBO IC PC TJ, TSTG 60 50 7 150 100 150, -55 ~ 150 Unit V V V mA mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test condition Collector to Base Breakdown Voltage V(BR)CBO 60 - - V IC=50µA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 50 - - V IC=1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 7 - - V IE=50µA, IC=0 Collector Cut-Off Current ICBO - - 0.1 µA VCB=60V, IE=0 Emitter Cut-Off Current IEBO - - 0.1 µA VEB=7V, IC=0 DC Current Gain hFE 120 - 560 VCE=6V, IC=1mA Collector to Emitter Saturation Voltage VCE(sat) - - 0.4 V IC=50mA, IB=5mA Transition Frequency ...




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