BC847PN

BC847PN BC847PN NPN PNP Complementary Surface Mount General Purpose Si-Planar Transistors Komplementäre Si-Planar Transistoren für die Oberflächenmontage Version 2006-09-05 2±0.1 2 x 0.65 65 4 0.9±0.1 Type Code 123 2.4 Dimensions - Maße [mm] 6 = C1 5 = B2 4 = E2 1 = E1 2 = B1 3 = C2 2.1±0.1 1.25±0.1 Power dissipation Verlustleistung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle NPN PNP 300 mW SOT-363 0.01 g Maximum ratings (TA = 25°C) per transistor – pro Transistor Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Peak Base current – Basis-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open VCBO VCEO VEB0 Ptot IC ICM IBM Tj TS Grenzwerte (TA = 25°C) BC847PN 45 V 50 V 6V 300 mW 1) 100 mA 200 mA 200 mA -55...+150°C -55…+150°C Characteristics (Tj = 25°C) DC current gain – Kollektor-Basis-Stromverhältnis VCE = 5 V, IC = 2 mA T1 - NPN hFE - VCE = 5 V, - IC = 2 mA T2 - PNP hFE Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA T1 ...