Document
Small Signal Product
BZX55B2V4 thru BZX55B75
Taiwan Semiconductor
2% Tolerance Zener Diode
FEATURES
- Wide zener voltage range selection: 2.4V to 75V - VZ Tolerance Selection of ± 2% - Hermetically sealed glasss - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free and RoHS compliant - All external surfaces are corrosion resistant and
leads are readily solderable - ESD rating 15KV per human body model - Packing code with suffix "G" means
Halogen-free
DO-35 Hermetically Sealed Glass
MECHANICAL DATA
- Case: DO-35 - High temperature soldering guaranteed: 260oC/10s - Polarity: Indicated by black cathode band - Weight: 109 ± 4 mg
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBO
VALUE
Power Dissipation
PD 500
Forward Voltage
IF = 10 mA
VF
1
Thermal Resistance (Junction to Ambient)
(Note 1) RθJA
240
Junction and Storage Temperature Range
TJ, TSTG
- 65 to +200
Note1: Valid provided that electrodes are kept at ambient temperature, and mount on PC board 50mm x 50mm x1.6mm
Zener I vs. V Characteristics
VBR : Voltage at IZK IZK : Test current for voltage VBR ZZK : Dynamic impedance at IZK IZT : Test current for voltage VZ VZ : Voltage at current IZT ZZT : Dynamic impedance at IZT IZM : Maximum steady state current VZM : Voltage at IZM
UNIT mW
V oC/W
oC
Document Number: DS_S1410002
Version: E14
Small Signal Product
BZX55B2V4 thru BZX55B75
Taiwan Semiconductor
ELECTRICAL CHARACTERISTICS ( TA= 25oC unless otherwise noted )
Part Number
VZ @ IZT (Volt) Nom Min Max
IZT (mA)
ZZT @ IZT (Ω) Max
IZK (mA)
ZZK @ IZK (Ω) IR @ VR(μA) Max Max
BZX55B2V4 2.4 2.35 2.45
5.0
85
1.0 600
50
BZX55B2V7 2.7 2.65 2.75
5.0
85
1.0 600
10
BZX55B3V0 3.0 2.94 3.06
5.0
85
1.0 600
4.0
BZX55B3V3 3.3 3.23 3.37
5.0
85
1.0 600
2.0
BZX55B3V6 3.6 3.53 3.67
5.0
85
1.0 600
2.0
BZX55B3V9 3.9 3.82 3.98
5.0
85
1.0 600
2.0
BZX55B4V3 4.3 4.21 4.39
5.0
75
1.0 600
1.0
BZX55B4V7 4.7 4.61 4.79
5.0
60
1.0 600
0.5
BZX55B5V1 5.1 5.00 5.20
5.0
35
1.0 550
0.1
BZX55B5V6 5.6 5.49 5.71
5.0
25
1.0 450
0.1
BZX55B6V2 6.2 6.08 6.32
5.0
10
1.0 200
0.1
BZX55B6V8 6.8 6.66 6.94
5.0
8
1.0 150
0.1
BZX55B7V5 7.5 7.35 7.65
5.0
7
1.0 50
0.1
BZX55B8V2 8.2 8.04 8.36
5.0
7
1.0 50
0.1
BZX55B9V1 9.1 8.92 9.28
5.0
10
1.0
50
0.1
BZX55B10
10 9.80 10.20
5.0
15
1.0
70
0.1
BZX55B11
11 10.78 11.22
5.0
20
1.0
70
0.1
BZX55B12
12 11.76 12.24
5.0
20
1.0
90
0.1
BZX55B13
13 12.74 13.26
5.0
26
1.0 110
0.1
BZX55B15
15 14.70 15.30
5.0
30
1.0 110
0.1
BZX55B16
16 15.68 16.32
5.0
40
1.0 170
0.1
BZX55B18
18 17.64 18.36
5.0
50
1.0 170
0.1
BZX55B20
20 19.60 20.40
5.0
55
1.0 220
0.1
BZX55B22
22 21.56 22.44
5.0
55
1.0 220
0.1
BZX55B24
24 23.52 24.48
5.0
80
1.0 220
0.1
BZX55B27
27 26.46 27.54
5.0
80
1.0 220
0.1
BZX55B30
30 29.40 30.60
5.0
80
1.0 220
0.1
BZX55B33
33 32.34 33.66
5.0
80
1.0 220
0.1
BZX55B36
36 35.28 36.72
5.0
80
1.0 220
0.1
BZX55B39
39 38.22 39.78
2.5
90
0.5 500
0.1
BZX55B43
43 42.14 43.86
2.5
90
0.5 600
0.1
BZX55B47
47 46.06 47.94
2.5
110
0.5
700
0.1
BZX55B51
51 49.98 52.02
2.5
125
0.5
700
0.1
BZX55B56
56 54.88 57.12
2.5
135
0.5 1000
0.1
BZX55B62
62 60.76 63.24
2.5
150
0.5 1000
0.1
BZX55B68
68 66.64 69.36
2.5
160
0.5 1000
0.1
BZX55B75
75 73.50 76.50
2.5
170
0.5 1000
0.1
Notes: 1. The Zener Voltage (VZ) is tested under pulse condition of 10ms. 2. The device numbers listed have a standard tolerance on the nomial zener voltage of ±2%
3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages
shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative.
4. The Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an RMS value equal to 10% of the dc zener current(IZT or IZK) is superimposed to IZT or IZK.
VR (V)
1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 3.0 5.0 6.2 6.8 7.5 8.2 9.1 10 11 12 14 15 17 18 20 22 24 27 28 32 35 38 42 47 51 56
Document Number: DS_S1410002
Version: E14
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
1000
Fig. 1 Typical Forward Characteristics
Forward Current (mA)
100 TA=75oC
10
TA=25oC
1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Forward Voltage (V)
Zener Current (mA)
Fig. 3 Zener Breakdown Characteristics 100
10
1
0.1
0.01 10 20 30 40 50 60 70 80 Zener Voltage (V)
Power Dissipation (mW)
Zener Current (mA)
BZX55B2V4 thru BZX55B75
Taiwan Semiconductor
Fig. 2 Zener Breakdown Characteristics 100
TA=25oC 10
1
0.1
0.01 0 1 2 3 4 5 6 7 8 9 10 11 12 Zener Voltage (V)
600 500 400 300 200 100
0 0
Fig. 4 Admissible Power Dissipation curve
40 80 120 160 Ambient Temperature (oC)
200
Capacitance (pF)
1000 100
Fig. 5 Typical Capacitance 1V Bias
10 Bias at 50% of VZ (Nom)
1 1
.