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BZX55B39 Dataheets PDF



Part Number BZX55B39
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Zener Diode
Datasheet BZX55B39 DatasheetBZX55B39 Datasheet (PDF)

Small Signal Product BZX55B2V4 thru BZX55B75 Taiwan Semiconductor 2% Tolerance Zener Diode FEATURES - Wide zener voltage range selection: 2.4V to 75V - VZ Tolerance Selection of ± 2% - Hermetically sealed glasss - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free and RoHS compliant - All external surfaces are corrosion resistant and leads are readily solderable - ESD rating 15KV per human body model - Packing code with suffix "G" means Halogen-free .

  BZX55B39   BZX55B39


Document
Small Signal Product BZX55B2V4 thru BZX55B75 Taiwan Semiconductor 2% Tolerance Zener Diode FEATURES - Wide zener voltage range selection: 2.4V to 75V - VZ Tolerance Selection of ± 2% - Hermetically sealed glasss - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free and RoHS compliant - All external surfaces are corrosion resistant and leads are readily solderable - ESD rating 15KV per human body model - Packing code with suffix "G" means Halogen-free DO-35 Hermetically Sealed Glass MECHANICAL DATA - Case: DO-35 - High temperature soldering guaranteed: 260oC/10s - Polarity: Indicated by black cathode band - Weight: 109 ± 4 mg MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBO VALUE Power Dissipation PD 500 Forward Voltage IF = 10 mA VF 1 Thermal Resistance (Junction to Ambient) (Note 1) RθJA 240 Junction and Storage Temperature Range TJ, TSTG - 65 to +200 Note1: Valid provided that electrodes are kept at ambient temperature, and mount on PC board 50mm x 50mm x1.6mm Zener I vs. V Characteristics VBR : Voltage at IZK IZK : Test current for voltage VBR ZZK : Dynamic impedance at IZK IZT : Test current for voltage VZ VZ : Voltage at current IZT ZZT : Dynamic impedance at IZT IZM : Maximum steady state current VZM : Voltage at IZM UNIT mW V oC/W oC Document Number: DS_S1410002 Version: E14 Small Signal Product BZX55B2V4 thru BZX55B75 Taiwan Semiconductor ELECTRICAL CHARACTERISTICS ( TA= 25oC unless otherwise noted ) Part Number VZ @ IZT (Volt) Nom Min Max IZT (mA) ZZT @ IZT (Ω) Max IZK (mA) ZZK @ IZK (Ω) IR @ VR(μA) Max Max BZX55B2V4 2.4 2.35 2.45 5.0 85 1.0 600 50 BZX55B2V7 2.7 2.65 2.75 5.0 85 1.0 600 10 BZX55B3V0 3.0 2.94 3.06 5.0 85 1.0 600 4.0 BZX55B3V3 3.3 3.23 3.37 5.0 85 1.0 600 2.0 BZX55B3V6 3.6 3.53 3.67 5.0 85 1.0 600 2.0 BZX55B3V9 3.9 3.82 3.98 5.0 85 1.0 600 2.0 BZX55B4V3 4.3 4.21 4.39 5.0 75 1.0 600 1.0 BZX55B4V7 4.7 4.61 4.79 5.0 60 1.0 600 0.5 BZX55B5V1 5.1 5.00 5.20 5.0 35 1.0 550 0.1 BZX55B5V6 5.6 5.49 5.71 5.0 25 1.0 450 0.1 BZX55B6V2 6.2 6.08 6.32 5.0 10 1.0 200 0.1 BZX55B6V8 6.8 6.66 6.94 5.0 8 1.0 150 0.1 BZX55B7V5 7.5 7.35 7.65 5.0 7 1.0 50 0.1 BZX55B8V2 8.2 8.04 8.36 5.0 7 1.0 50 0.1 BZX55B9V1 9.1 8.92 9.28 5.0 10 1.0 50 0.1 BZX55B10 10 9.80 10.20 5.0 15 1.0 70 0.1 BZX55B11 11 10.78 11.22 5.0 20 1.0 70 0.1 BZX55B12 12 11.76 12.24 5.0 20 1.0 90 0.1 BZX55B13 13 12.74 13.26 5.0 26 1.0 110 0.1 BZX55B15 15 14.70 15.30 5.0 30 1.0 110 0.1 BZX55B16 16 15.68 16.32 5.0 40 1.0 170 0.1 BZX55B18 18 17.64 18.36 5.0 50 1.0 170 0.1 BZX55B20 20 19.60 20.40 5.0 55 1.0 220 0.1 BZX55B22 22 21.56 22.44 5.0 55 1.0 220 0.1 BZX55B24 24 23.52 24.48 5.0 80 1.0 220 0.1 BZX55B27 27 26.46 27.54 5.0 80 1.0 220 0.1 BZX55B30 30 29.40 30.60 5.0 80 1.0 220 0.1 BZX55B33 33 32.34 33.66 5.0 80 1.0 220 0.1 BZX55B36 36 35.28 36.72 5.0 80 1.0 220 0.1 BZX55B39 39 38.22 39.78 2.5 90 0.5 500 0.1 BZX55B43 43 42.14 43.86 2.5 90 0.5 600 0.1 BZX55B47 47 46.06 47.94 2.5 110 0.5 700 0.1 BZX55B51 51 49.98 52.02 2.5 125 0.5 700 0.1 BZX55B56 56 54.88 57.12 2.5 135 0.5 1000 0.1 BZX55B62 62 60.76 63.24 2.5 150 0.5 1000 0.1 BZX55B68 68 66.64 69.36 2.5 160 0.5 1000 0.1 BZX55B75 75 73.50 76.50 2.5 170 0.5 1000 0.1 Notes: 1. The Zener Voltage (VZ) is tested under pulse condition of 10ms. 2. The device numbers listed have a standard tolerance on the nomial zener voltage of ±2% 3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative. 4. The Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an RMS value equal to 10% of the dc zener current(IZT or IZK) is superimposed to IZT or IZK. VR (V) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 3.0 5.0 6.2 6.8 7.5 8.2 9.1 10 11 12 14 15 17 18 20 22 24 27 28 32 35 38 42 47 51 56 Document Number: DS_S1410002 Version: E14 Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) 1000 Fig. 1 Typical Forward Characteristics Forward Current (mA) 100 TA=75oC 10 TA=25oC 1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Forward Voltage (V) Zener Current (mA) Fig. 3 Zener Breakdown Characteristics 100 10 1 0.1 0.01 10 20 30 40 50 60 70 80 Zener Voltage (V) Power Dissipation (mW) Zener Current (mA) BZX55B2V4 thru BZX55B75 Taiwan Semiconductor Fig. 2 Zener Breakdown Characteristics 100 TA=25oC 10 1 0.1 0.01 0 1 2 3 4 5 6 7 8 9 10 11 12 Zener Voltage (V) 600 500 400 300 200 100 0 0 Fig. 4 Admissible Power Dissipation curve 40 80 120 160 Ambient Temperature (oC) 200 Capacitance (pF) 1000 100 Fig. 5 Typical Capacitance 1V Bias 10 Bias at 50% of VZ (Nom) 1 1 .


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