TSM060N03

TSM060N03 Taiwan Semiconductor N-Channel Power MOSFET 30V, 60A, 6mΩ FEATURES ● 100% avalanche tested ● Fast switching ● Pb-free plating ● RoHS compliant ● Halogen-free mold compound APPLICATION ● Mobile device DC-DC conversion ● Point of Load (POL) DC-DC ● Secondary Switch Rectification PDFN33 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 30 V RDS(on) (max) Qg VGS =10V VGS =4.5V 6 9 11.1 mΩ nC Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C TC = 100°C Single Pulsed Avalanche Energy (Note 3) Single Pulsed Avalanche Current (Note 3) Total Power Dissipation @ TC = 25°C Operating Junction and Storage Temperature Range VDS VGS ID IDM EAS IAS PDTOT TJ, TSTG 30 ±20 60 38 240 88 42 45 - 55 to +150 UNIT V V A A mJ A W °C THERMAL PERFORMANCE PARAMETER Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance SYMBOL RӨJc RӨJA LIMIT 2.8 62 UNIT oC/W oC/W Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air Document Number: DS_P0000164 1 Version: A15 TSM060...