TSM126

TSM126 N-Channel Depletion-Mode MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(Ω)(max) 600 700 @ VGS = 0V ID (A) 0.03 Features ● Depletion Mode ● Low Gate Charge Application ● Converters ● Telecom Ordering Information Part No. Package Packing TSM126CX RFG SOT-23 3kpcs / 7” Reel Note: “G” denotes Halogen Free Product. Block Diagram N-Channel MOSFET Absolute Maximum Ratings (Ta = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Tc=25℃ Continuous Drain Current Pulsed Drain Current a Tc=70℃ Maximum Power Dissipation Soldering Temperature b Operating Junction Temperature Operating Junction and Storage Temperature Range VDS VGS ID IDM PD TL TJ TJ, TSTG Thermal Performance Parameter Thermal Resistance, Junction to Ambient Notes: a. Pulse width limited by the Maximum junction temperature b. Distance of 1.6mm from case for 10 seconds. Symbol RӨJA Limit 600 ±20 0.030 0.024 0.120 0.5 300 +150 -55 to +150 Limit 250 Unit V V A A A W oC oC oC Unit oC/W 1/7 Version: A14 TSM126 N-Channel Depletion-Mode MOSFET Electrical Specifications (Tj = 25oC unless otherwise noted) Parameter Statica Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source cutoff current Drain-Source cutoff current Gate-Source Leakage Current On-state Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Revers...