Document
TSM120N10PQ56
100V N-Channel MOSFET
PDFN56
Pin Definition:
1. Source 8. Drain
2. Source 7. Drain
3. Source 6. Drain
4. Gate
5. Drain
Key Parameter Performance
Parameter
Value
Unit
VDS RDS(on)(max)
100 12
V mΩ
Qg 145 nC
Features
● Low On-Resistance ● Low Input Capacitance ● Low Gate Charge
Ordering Information
Part No.
Package
Packing
TSM120N10PQ56 RLG PDFN56 2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
Block Diagram
N-Channel MOSFET
Absolute Maximum Ratings (Tc=25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (Note 3)
Drain Current-Pulsed (Note 1) Single Pulse Avalanche Energy, L=0.5mH
Maximum Power Dissipation (Note 2)
Storage Temperature Range Operating Junction Temperature Range
TC=25°C TA=25°C
TC=25°C TA=25°C
VDS VGS
ID
IDM EAS
PD
TSTG TJ
Thermal Performance Parameter
Symbol
Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient
RӨJC RӨJA
Limit
100 ±20 58 16.1 150 156 36
2 -55 to +150 -55 to +150
Limit
1.2 62
Unit
V V
A
A mJ
W
°C °C
Unit
oC/W oC/W
1/6 Version: A14
TSM120N10PQ56
100V N-Channel MOSFET
Electrical Specifications (TJ=25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ Max Unit
Static
Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage
VGS = 0V, ID = 250µA VGS = 10V, ID = 30A VDS = VGS, ID = 250µA VDS = 80V, VGS = 0V VGS = ±20V, VDS = 0V
BVDSS RDS(ON) VGS(TH)
IDSS IGSS
100 -2 ---
-- -- V 10 12 mΩ 3 4V -- 1 µA -- ±100 nA
Dynamic
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching
VDS = 50V, ID = 30A, VGS = 10V
VDS = 30V, VGS = 0V, f = 1.0MHz
Qg -- 145 -Qgs -- 25 -- nC Qgd -- 43 -Ciss -- 3902 -Coss -- 251 -- pF Crss -- 93 --
Turn-On Delay Time
Turn-On Rise Time Turn-Off Delay Time
VGS = 10V, VDS = 50V, RG = 3Ω, ID = 30A
Turn-Off Fall Time
Drain-Source Diode Characteristics and Maximum Rating
Drain-Source Diode Forward Voltage
VGS=0V, IS=30A
td(on) tr
td(off) tf
VSD
-- 27 --- 13 --
ns -- 15 --- 42 --
-- -- 1.3 V
Reverse Recovery Time Reverse Recovery Charge
IS = 30A, dI/dt = 100A/µs
trr Qrr
-- 65 -- ns -- 175 -- nC
Notes:
1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
2. RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference
is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is
determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air
3. The maximum current is limited by package.
2/6 Version: A14
Electrical Characteristics Curves
Output Characteristics
TSM120N10PQ56
100V N-Channel MOSFET
Gate Threshold Voltage
IDS=250µA
Gate Source On Resistance
Drain-Source On Resistance
Drain-Source On-Resistance
Source-Drain Diode Forward Voltage
3/6 Version: A14
Electrical Characteristics Curves
Power Derating
TSM120N10PQ56
100V N-Channel MOSFET
Drain Current vs. Junction Temperature
Safe Operation Area
Transient Thermal Impedance
Capacitance
Gate Charge
4/6 Version: A14
TSM120N10PQ56
100V N-Channel MOSFET PDFN56 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code
5/6 Version: A14
TSM120N10PQ56
100V N-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.
6/6 Version: A14
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