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TSM120N10PQ56 Dataheets PDF



Part Number TSM120N10PQ56
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description N-Channel Power MOSFET
Datasheet TSM120N10PQ56 DatasheetTSM120N10PQ56 Datasheet (PDF)

TSM120N10PQ56 100V N-Channel MOSFET PDFN56 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Key Parameter Performance Parameter Value Unit VDS RDS(on)(max) 100 12 V mΩ Qg 145 nC Features ● Low On-Resistance ● Low Input Capacitance ● Low Gate Charge Ordering Information Part No. Package Packing TSM120N10PQ56 RLG PDFN56 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm c.

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TSM120N10PQ56 100V N-Channel MOSFET PDFN56 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Key Parameter Performance Parameter Value Unit VDS RDS(on)(max) 100 12 V mΩ Qg 145 nC Features ● Low On-Resistance ● Low Input Capacitance ● Low Gate Charge Ordering Information Part No. Package Packing TSM120N10PQ56 RLG PDFN56 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Block Diagram N-Channel MOSFET Absolute Maximum Ratings (Tc=25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) Drain Current-Pulsed (Note 1) Single Pulse Avalanche Energy, L=0.5mH Maximum Power Dissipation (Note 2) Storage Temperature Range Operating Junction Temperature Range TC=25°C TA=25°C TC=25°C TA=25°C VDS VGS ID IDM EAS PD TSTG TJ Thermal Performance Parameter Symbol Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient RӨJC RӨJA Limit 100 ±20 58 16.1 150 156 36 2 -55 to +150 -55 to +150 Limit 1.2 62 Unit V V A A mJ W °C °C Unit oC/W oC/W 1/6 Version: A14 TSM120N10PQ56 100V N-Channel MOSFET Electrical Specifications (TJ=25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage VGS = 0V, ID = 250µA VGS = 10V, ID = 30A VDS = VGS, ID = 250µA VDS = 80V, VGS = 0V VGS = ±20V, VDS = 0V BVDSS RDS(ON) VGS(TH) IDSS IGSS 100 -2 --- -- -- V 10 12 mΩ 3 4V -- 1 µA -- ±100 nA Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 50V, ID = 30A, VGS = 10V VDS = 30V, VGS = 0V, f = 1.0MHz Qg -- 145 -Qgs -- 25 -- nC Qgd -- 43 -Ciss -- 3902 -Coss -- 251 -- pF Crss -- 93 -- Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VGS = 10V, VDS = 50V, RG = 3Ω, ID = 30A Turn-Off Fall Time Drain-Source Diode Characteristics and Maximum Rating Drain-Source Diode Forward Voltage VGS=0V, IS=30A td(on) tr td(off) tf VSD -- 27 --- 13 -- ns -- 15 --- 42 -- -- -- 1.3 V Reverse Recovery Time Reverse Recovery Charge IS = 30A, dI/dt = 100A/µs trr Qrr -- 65 -- ns -- 175 -- nC Notes: 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 2. RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air 3. The maximum current is limited by package. 2/6 Version: A14 Electrical Characteristics Curves Output Characteristics TSM120N10PQ56 100V N-Channel MOSFET Gate Threshold Voltage IDS=250µA Gate Source On Resistance Drain-Source On Resistance Drain-Source On-Resistance Source-Drain Diode Forward Voltage 3/6 Version: A14 Electrical Characteristics Curves Power Derating TSM120N10PQ56 100V N-Channel MOSFET Drain Current vs. Junction Temperature Safe Operation Area Transient Thermal Impedance Capacitance Gate Charge 4/6 Version: A14 TSM120N10PQ56 100V N-Channel MOSFET PDFN56 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 5/6 Version: A14 TSM120N10PQ56 100V N-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: A14 .


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