TSM160P02

TSM160P02 Taiwan Semiconductor P-Channel Power MOSFET -20V, -11A, 16mΩ FEATURES ● Improved dV/dt capability ● Fast Switching ● Suitable for 1.8V drive applications ● Pb-free plating ● RoHS compliant ● Halogen-free mold compound APPLICATION ● Load Switch ● Networking KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS VGS = -4.5V RDS(on) (max) VGS = -2.5V VGS = -1.8V Qg -20 16 22 28 27 V mΩ nC SOP-8 Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±10 Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C TC = 100°C ID IDM -11 -7 -44 Total Power Dissipation @ TC = 25°C PDTOT 2.5 Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 UNIT V V A A W °C THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 25 °C/W Junction to Ambient Thermal Resistance RӨJA 50 °C/W Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air. Document Number: DS_P0000161 1 Version: A15 TSM160P02 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) P...