N-Channel Power MOSFET
TSM180N03CS
30V N-Channel Power MOSFET
SOP-8
Pin Definition:
1. Source 8. Drain
2. Source 7. Drain
3. Source 6. Dra...
Description
TSM180N03CS
30V N-Channel Power MOSFET
SOP-8
Pin Definition:
1. Source 8. Drain
2. Source 7. Drain
3. Source 6. Drain
4. Gate
5. Drain
Key Parameter Performance
Parameter
Value
VDS
RDS(on) (max)
VGS = 10V VGS = 4.5V
30 18 28
Qg 4.1
Unit V mΩ
nC
Ordering Information
Part No.
Package
Packing
TSM180N03CS RLG SOP-8
2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds
Block Diagram
Absolute Maximum Ratings (Tc=25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Current (Note 1) Single Pulse Avalanche Energy (Note 2) Power Dissipation @ TC = 25oC
Tc=25ºC Tc=100ºC
ID
IDM EAS PD
Operating Junction Temperature
TJ
Storage Temperature Range
TSTG
Thermal Performance Parameter
Symbol
Thermal Resistance - Junction to Ambient
RӨJA
N-Channel MOSFET
Limit 30 ±20 9 5.7 36 32 2.5 150
-55 to +150
Limit 50
Unit V V A A A mJ W ºC oC
Unit oC/W
1/5 Version: A14
TSM180N03CS
30V N-Channel Power MOSFET
Electrical Specifications (TJ=25oC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Forward Transconductance (Note 3) Dynamic Total Gate Charge (Note 3,4) Gate-Source Charge (Note 3,4) ...
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