P-Channel Power MOSFET
TSM2305
20V P-Channel MOSFET
SOT-23
Pin Definition: 1. Gate 2. Source 3. Drain
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
...
Description
TSM2305
20V P-Channel MOSFET
SOT-23
Pin Definition: 1. Gate 2. Source 3. Drain
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
52 @ VGS =-4.5V
-20 71 @ VGS =-2.5V
108 @ VGS =-1.8V
ID (A)
-3.2 -2.7
-2.0
Features
● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance
Application
● Battery Management ● High Speed Switch
Ordering Information
Part No.
Package
Packing
TSM2305CX RFG SOT-23
3Kpcs / 7” Reel
Note: “G” denotes Halogen Free Product.
Block Diagram
P-Channel MOSFET
Absolute Maximum Rating (TA=25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current Continuous Source Current (Diode Conduction)a,b
Maximum Power Dissipation
TA=25oC TA=75oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
VDS VGS ID IDM IS
PD
TJ TJ, TSTG
Thermal Performance Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on a 1 in2 pad of 2oz Cu, t ≤ 10 sec.
Symbol
RӨJC RӨJA
Limit
-20 ±8 -3.2 -10 -1 1.25 0.8 +150 -55 to +150
Limit
80 150
Unit
V V A A A
W
oC oC
Unit
oC/W oC/W
1/6 Version: B11
TSM2305
20V P-Channel MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain...
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