TSM2303

TSM2303 30V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 180 @ VGS =-10V -30 300 @ VGS =-4.5V ID (A) -1.3 -1.1 Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Portable Devices ● High Speed Switch Ordering Information Part No. Package Packing TSM2303CX RFG SOT-23 3Kpcs / 7” Reel Note: “G” denotes Halogen Free Product. Block Diagram P-Channel MOSFET Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction)a,b Maximum Power Dissipation TA=25oC TA=75oC Operating Junction Temperature Operating Junction and Storage Temperature Range VDS VGS ID IDM IS PD TJ TJ, TSTG Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on a 1 in2 pad of 2oz Cu, t ≤ 5 sec. Symbol RӨJC RӨJA Limit -30 ±20 -1.3 -10 -1.3 0.7 0.45 +150 -55 to +150 Limit 80 140 Unit V V A A A W oC oC Unit oC/W oC/W 1/6 Version: A11 TSM2303 30V P-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current Drain-Source O...