TSM240N03CX

TSM240N03CX 30V N-Channel Power MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 Key Parameter Performance Parameter Value VDS 30 VGS = 10V 24 RDS(on) (max) VGS = 4.5V 34 Qg 4.1 Unit V mΩ nC Ordering Information Ordering code Package Packing TSM240N03CX RFG SOT-23 3kpcs / 7” Reel ● Note: Halogen-free according to IEC 61249-2-21 definition Block Diagram Absolute Maximum Ratings (TC = 25°C unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse Avalanche Energy (Note 2) Power Dissipation @ TC = 25°C Operating Junction Temperature Storage Temperature Range TC = 25°C TC = 100°C VDS VGS ID IDM EAS PD TJ TSTG Thermal Performance Parameter Symbol Thermal Resistance - Junction to Ambient RӨJA N-Channel MOSFET Limit 30 ±20 6.5 4.1 26 32 1.56 150 -55 to +150 Limit 80 Unit V V A A A mJ W °C °C Unit °C/W 1/5 Version: B1811 TSM240N03CX 30V N-Channel Power MOSFET Electrical Specifications (TC = 25°C unless otherwise noted) Parameter Conditions Symbol Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage VGS = 0V, ID = 250µA VGS = 10V, ID = 6A VGS = 4.5V, ID = 4A VDS = VGS, ID = 250µA BVDSS RDS(on) VGS(TH) VDS = 30V, VGS = 0V Zero Gate Voltage Drain Current IDSS VDS = 24V, TJ = 125°C Gate Body Leakage VGS = ±20V, VDS = 0V IGSS Forward Transcondu...