TSM250N02DCQ

TSM250N02DCQ 20V Dual N-Channel MOSFET TDFN 2x2 Pin Definition: 1. Source 1 2. Gate 1 3. Drain 2 6. Drain 1 5. Gate 2 4. Source 2 Key Parameter Performance Parameter Value VDS VGS = 4.5V RDS(on) (max) VGS = 2.5V VGS = 1.8V 20 25 35 55 Qg 7.7 Unit V mΩ nC Features Suitable for 1.8V drive applications Low profile package Block Diagram Ordering Information Part No. Package Packing TSM250N02DCQ RFG TDFN 2x2 3kpcs / 7” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Dual N-Channel MOSFET Absolute Maximum Ratings (TC=25°C unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Maximum Power Dissipation @ TC=25oC Operating Junction Temperature Operating Junction and Storage Temperature Range VDS VGS ID IDM PD TJ TJ, TSTG Thermal Performance Parameter Thermal Resistance Junction to Ambient Symbol RӨJA Limit 20 ±10 5.8 23.2 1 +150 - 55 to +150 Limit 80 Unit V V A A W °C °C Unit °C/W 1/5 Version: A14 TSM250N02DCQ 20V Dual N-Channel MOSFET Electrical Specifications (TC=25°C unless otherwise noted) Parameter Conditions Symbol Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance (Note 2) Dynamic Total Gate Charge (Note 2,3) Gate-Sour...