TSM500N03

TSM500N03 30V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS = 10V VGS = 4.5V 30 50 80 Qg 4 Unit V mΩ nC Application Portable application DC to DC converter Ordering Information Part No. Package Packing TSM500N03CP ROG TO-252 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Block Diagram Absolute Maximum Ratings (TC=25°C unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current (Note 1) Power Dissipation @ TC=25oC TC=25°C TC=100°C ID IDM PD Operating Junction Temperature TJ Storage Temperature Range TSTG Thermal Performance Parameter Symbol Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient RӨJC RӨJA N-Channel MOSFET Limit 30 ±20 12.5 8 40 12.5 150 -55 to +150 Limit 10 110 Unit V V A A A W °C °C Unit °C/W 1/5 Version: A14 TSM500N03 30V N-Channel Power MOSFET Electrical Specifications (TC=25°C unless otherwise noted) Parameter Conditions Symbol Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage VGS = 0V, ID = 250µA VGS = 10V, ID = 8A VGS = 4.5V, ID = 8A VDS = VGS, ID = 250µA BVDSS RDS(ON) VGS(TH) Zero Gate Voltage Drain Current Gate Body Leakage Dynamic Tot...