TSM500P02DCQ

TSM500P02DCQ 20V Dual P-Channel MOSFET TDFN2x2 Pin Definition: 1. Source 1 6. Drain 1 2. Gate 1 5. Gate 2 3. Drain 2 4. Source 2 Key Parameter Performance Parameter Value VDS VGS = -4.5V RDS(on) (max) VGS = -2.5V VGS = -1.8V -20 50 65 85 Qg 9.6 Unit V mΩ nC Features l Halogen-free l Suited for 1.8V drive applications l Low profile package Ordering Information Part No. Package Packing TSM500P02DCQ RFG TDFN2x2 3kpcs / 7” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Block Diagram Dual P-Channel MOSFET Absolute Maximum Ratings (TC = 25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Maximum Power Dissipation @ TC = 25℃ Operating Junction Temperature Operating Junction and Storage Temperature Range VDS VGS ID IDM PD TJ TJ, TSTG Thermal Performance Parameter Thermal Resistance Junction to Ambient Symbol RӨJA Limit -20 ±10 -4.7 -18.8 1 +150 - 55 to +150 Limit 80 Unit V V A A W ℃ ℃ Unit ℃/W 1/5 Version: A14 TSM500P02DCQ 20V Dual P-Channel MOSFET Electrical Specifications (TC = 25℃ unless otherwise noted) Parameter Conditions Symbol Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance (Note 2) Dynamic Total Gate Cha...